Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

Qian Chen, Benjamin F. Bory, Asal Kiazadeh, Paulo R F Rocha, Henrique L. Gomes, Frank Verbakel, Dago M. De Leeuw, Stefan C J Meskers

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Abstract

Metal-insulator-polymer diodes where the insulator is a thin oxide (Al 2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. The amount of stored charge is determined from the optically induced discharging current transient as a function of applied voltage and oxide thickness. When the charge density exceeds 8 1017/m2, an irreversible soft breakdown transition occurs to a non-volatile memory diode.

Original languageEnglish
Article number083305
JournalApplied Physics Letters
Volume99
Issue number8
DOIs
Publication statusPublished - 22 Aug 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Chen, Q., Bory, B. F., Kiazadeh, A., Rocha, P. R. F., Gomes, H. L., Verbakel, F., De Leeuw, D. M., & Meskers, S. C. J. (2011). Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes. Applied Physics Letters, 99(8), [083305]. https://doi.org/10.1063/1.3628301