Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

Qian Chen, Benjamin F. Bory, Asal Kiazadeh, Paulo R F Rocha, Henrique L. Gomes, Frank Verbakel, Dago M. De Leeuw, Stefan C J Meskers

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12 Citations (SciVal)


Metal-insulator-polymer diodes where the insulator is a thin oxide (Al 2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. The amount of stored charge is determined from the optically induced discharging current transient as a function of applied voltage and oxide thickness. When the charge density exceeds 8 1017/m2, an irreversible soft breakdown transition occurs to a non-volatile memory diode.

Original languageEnglish
Article number083305
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 22 Aug 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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