Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale

C.C.S. Chan, B.P.L. Reid, R.A. Taylor, W. Jia, Y. D. Zhuang, P.A. Shields, D.W.E. Allsopp

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Time-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks of 2 meV line-width were observed. The single nanorods possess longer decay rates than an unprocessed wafer at delay-times above 50 ns after excitation. The time evolution of the photoluminescence spectra implies that the slower decay times are due to surface related localisation near the perimeter of the nanorods, resulting in a spatial separation of the recombining carriers at low excitation densities.
Original languageEnglish
Article number111906
JournalApplied Physics Letters
Volume102
Issue number11
DOIs
Publication statusPublished - 18 Mar 2013

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nanorods
light emitting diodes
wafers
luminescence
decay rates
excitation
time lag
lithography
photoluminescence
decay

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Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale. / Chan, C.C.S.; Reid, B.P.L.; Taylor, R.A.; Jia, W.; Zhuang, Y. D.; Shields, P.A.; Allsopp, D.W.E.

In: Applied Physics Letters, Vol. 102, No. 11, 111906, 18.03.2013.

Research output: Contribution to journalArticle

Chan, C.C.S. ; Reid, B.P.L. ; Taylor, R.A. ; Jia, W. ; Zhuang, Y. D. ; Shields, P.A. ; Allsopp, D.W.E. / Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale. In: Applied Physics Letters. 2013 ; Vol. 102, No. 11.
@article{064fb104c8404e1fae84a1b7dd95701e,
title = "Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale",
abstract = "Time-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks of 2 meV line-width were observed. The single nanorods possess longer decay rates than an unprocessed wafer at delay-times above 50 ns after excitation. The time evolution of the photoluminescence spectra implies that the slower decay times are due to surface related localisation near the perimeter of the nanorods, resulting in a spatial separation of the recombining carriers at low excitation densities.",
author = "C.C.S. Chan and B.P.L. Reid and R.A. Taylor and W. Jia and Zhuang, {Y. D.} and P.A. Shields and D.W.E. Allsopp",
year = "2013",
month = "3",
day = "18",
doi = "10.1063/1.4795294",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AIP Publishing",
number = "11",

}

TY - JOUR

T1 - Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale

AU - Chan, C.C.S.

AU - Reid, B.P.L.

AU - Taylor, R.A.

AU - Jia, W.

AU - Zhuang, Y. D.

AU - Shields, P.A.

AU - Allsopp, D.W.E.

PY - 2013/3/18

Y1 - 2013/3/18

N2 - Time-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks of 2 meV line-width were observed. The single nanorods possess longer decay rates than an unprocessed wafer at delay-times above 50 ns after excitation. The time evolution of the photoluminescence spectra implies that the slower decay times are due to surface related localisation near the perimeter of the nanorods, resulting in a spatial separation of the recombining carriers at low excitation densities.

AB - Time-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks of 2 meV line-width were observed. The single nanorods possess longer decay rates than an unprocessed wafer at delay-times above 50 ns after excitation. The time evolution of the photoluminescence spectra implies that the slower decay times are due to surface related localisation near the perimeter of the nanorods, resulting in a spatial separation of the recombining carriers at low excitation densities.

UR - http://www.scopus.com/inward/record.url?scp=84875742302&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1063/1.4795294

U2 - 10.1063/1.4795294

DO - 10.1063/1.4795294

M3 - Article

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111906

ER -