Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells

Y D Zhuang, Szymon Lis, Jochen Bruckbauer, Simon E. J. O'Kane, Philip A. Shields, Paul R. Edwards, Jayanta Sarma, Robert W. Martin, Duncan W. E. Allsopp

Research output: Contribution to journalArticle

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Abstract

Measurements of light emission from GaN nanorods of diameter between 80 and 350 nm, containing either a three-well multiple InGaN quantum well or a single quantum well, have been performed by photoluminescence (PL) and cathodoluminescence (CL) hyperspectral imaging. The PL underwent a Stark shift to the blue as the nanorod diameter was reduced, indicating substantial relaxation of the compressive strain in the quantum wells. The intensity of the nanorod emission per unit area can exceed that of the planar starting material. The CL measurements revealed that the wavelength of the quantum well emission varied with radial position in the nanorod. Simulations by a modal expansion method revealed that the light extraction efficiency varies with radial position and the variation is dependent on nanorod diameter. Finite difference time domain simulations showed that Bloch mode formation in the buffer layer below the nanorods impacts on the light extraction.
Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume52
Issue number8 PART 2
DOIs
Publication statusPublished - 20 May 2013

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Nanorods
Semiconductor quantum wells
nanorods
Optical properties
quantum wells
optical properties
Cathodoluminescence
cathodoluminescence
Photoluminescence
photoluminescence
Light emission
Buffer layers
light emission
simulation
buffers
Wavelength
expansion
shift
wavelengths

Cite this

Zhuang, Y. D., Lis, S., Bruckbauer, J., O'Kane, S. E. J., Shields, P. A., Edwards, P. R., ... Allsopp, D. W. E. (2013). Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells. Japanese Journal of Applied Physics, 52(8 PART 2). https://doi.org/10.7567/JJAP.52.08JE11

Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells. / Zhuang, Y D; Lis, Szymon; Bruckbauer, Jochen; O'Kane, Simon E. J.; Shields, Philip A.; Edwards, Paul R.; Sarma, Jayanta; Martin, Robert W.; Allsopp, Duncan W. E.

In: Japanese Journal of Applied Physics, Vol. 52, No. 8 PART 2, 20.05.2013.

Research output: Contribution to journalArticle

Zhuang, YD, Lis, S, Bruckbauer, J, O'Kane, SEJ, Shields, PA, Edwards, PR, Sarma, J, Martin, RW & Allsopp, DWE 2013, 'Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells', Japanese Journal of Applied Physics, vol. 52, no. 8 PART 2. https://doi.org/10.7567/JJAP.52.08JE11
Zhuang, Y D ; Lis, Szymon ; Bruckbauer, Jochen ; O'Kane, Simon E. J. ; Shields, Philip A. ; Edwards, Paul R. ; Sarma, Jayanta ; Martin, Robert W. ; Allsopp, Duncan W. E. / Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. 8 PART 2.
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AU - Sarma, Jayanta

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