Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
- C Hodges
- , N Killat
- , S W Kaun
- , M H Wong
- , F Gao
- , T Palacios
- , U K Mishra
- , J S Speck
- , Daniel Wolverson
- , M Kuball
Research output: Contribution to journal › Article › peer-review
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