Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

C Hodges; N Killat; S W Kaun; M H Wong; F Gao; T Palacios; U K Mishra; J S Speck; Daniel Wolverson; M Kuball

doi:10.1063/1.3693427

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

C Hodges, N Killat, S W Kaun, M H Wong, F Gao, T Palacios, U K Mishra, J S Speck, Daniel Wolverson, M Kuball

Department of Physics

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Abstract

Degradation mechanisms in AlGaN/GaN high electron mobility transistors have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.

Original language	English
Article number	112106
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3693427
Publication status	Published - 2012

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10.1063/1.3693427

Wolverson APL 2012 100 112106
Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hodges, C., Killat, N., Kaun, S. W., Wong, M. H., Gao, F., Palacios, T., Mishra, U. K., Speck, J. S., Wolverson, D. and Kuball, M., 2012. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers. Applied Physics Letters, 100 (11), 112106, and may be found at http://dx.doi.org/10.1063/1.3693427
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title = "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers",

abstract = "Degradation mechanisms in AlGaN/GaN high electron mobility transistors have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.",

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AU - Hodges, C

AU - Killat, N

AU - Kaun, S W

AU - Wong, M H

AU - Gao, F

AU - Palacios, T

AU - Mishra, U K

AU - Speck, J S

AU - Wolverson, Daniel

AU - Kuball, M

PY - 2012

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AB - Degradation mechanisms in AlGaN/GaN high electron mobility transistors have been studied under pinch-off conditions. Sites of localized emission of electroluminescence (EL) in the form of hotspots, known to be related to gate leakage currents, are shown to be the result of the generation of non-radiative recombination centers in the AlGaN device layer during device stress. EL from the hotspot site contains both hot-carrier emission from the acceleration of charge carriers in the device channel and defect-related transitions. Gate leakage through the generated centers is the most likely mechanism for the observation of EL hotspots.

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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ER -

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

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