Abstract
Optical-field driven electron tunneling in nanojunctions has made demonstrable progress toward the development of ultrafast charge transport devices at subfemtosecond time scales, and have evidenced great potential as a springboard technology for the next generation of on-chip “lightwave electronics.” Here, the empirical findings on photocurrent the high nonlinearity in metal–insulator–metal (MIM) nanojunctions driven by ultrafast optical pulses in the strong optical-field regime are reported. In the present MIM device, a 14th power-law scaling is identified, never achieved before in any known solid-state device. This work lays important technological foundations for the development of a new generation of ultracompact and ultrafast electronics devices that operate with suboptical-cycle response times.
| Original language | English |
|---|---|
| Article number | 2101572 |
| Journal | Advanced Science |
| Volume | 8 |
| Issue number | 24 |
| Early online date | 27 Oct 2021 |
| DOIs | |
| Publication status | Published - 22 Dec 2021 |
Bibliographical note
Funding Information:The authors acknowledge funding from the National Key R&D Program of China (Grant No. 2016YFA0202000), the National Natural Science Foundation of China (Grant No. 51972072, 52072084, 51925203, 11774429, and 11974426), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant no. XDB36000000), CAS Interdisciplinary Innovation Team (Grant no. JCTD‐2018‐03), the Key‐Area Research and Development Program of Guangdong Province (Grant no. 2020B0101020002) and the GBA National Institute for Nanotechnology Innovation (Grant no. 2020GN0106).
Keywords
- high nonlinearity
- MIM nanojunction
- optical-field-driven tunneling
- ultrafast electronics
ASJC Scopus subject areas
- Medicine (miscellaneous)
- General Chemical Engineering
- General Materials Science
- Biochemistry, Genetics and Molecular Biology (miscellaneous)
- General Engineering
- General Physics and Astronomy