Optical-Field-Driven Electron Tunneling in a Metal-Insulator-Metal Nano-junction

Shenghan Zhou, Xiangdong Guo, Ke Chen, Matthew Cole, Zhenjun Li, Chi Li, Qing Dai

Research output: Contribution to journalArticlepeer-review

4 Citations (SciVal)


Optical-field driven electron tunneling in nanojunctions has made demonstrable progress toward the development of ultrafast charge transport devices at subfemtosecond time scales, and have evidenced great potential as a springboard technology for the next generation of on-chip “lightwave electronics.” Here, the empirical findings on photocurrent the high nonlinearity in metal–insulator–metal (MIM) nanojunctions driven by ultrafast optical pulses in the strong optical-field regime are reported. In the present MIM device, a 14th power-law scaling is identified, never achieved before in any known solid-state device. This work lays important technological foundations for the development of a new generation of ultracompact and ultrafast electronics devices that operate with suboptical-cycle response times.

Original languageEnglish
Article number2101572
JournalAdvanced Science
Issue number24
Early online date27 Oct 2021
Publication statusPublished - 22 Dec 2021


  • high nonlinearity
  • MIM nanojunction
  • optical-field-driven tunneling
  • ultrafast electronics

ASJC Scopus subject areas

  • Medicine (miscellaneous)
  • Chemical Engineering(all)
  • Materials Science(all)
  • Biochemistry, Genetics and Molecular Biology (miscellaneous)
  • Engineering(all)
  • Physics and Astronomy(all)


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