Optical characterization of magnesium incorporation in p-GaN layers for core-shell nanorod light-emitting diodes

I. Gîrgel, A. Šatka, J. Priesol, P. M. Coulon, E. D. Le Boulbar, T. Batten, D. W.E. Allsopp, P. A. Shields

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3 Citations (Scopus)


III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance-voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core-shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core-shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core-shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.

Original languageEnglish
Article number155103
JournalJournal of Physics D: Applied Physics
Issue number15
Publication statusPublished - 20 Mar 2018



  • cathodoluminescence
  • core-shell
  • doping
  • EBIC
  • nanorod
  • p-GaN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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