Abstract
III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance-voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core-shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core-shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core-shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.
| Original language | English |
|---|---|
| Article number | 155103 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 51 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 20 Mar 2018 |
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Keywords
- cathodoluminescence
- core-shell
- doping
- EBIC
- nanorod
- p-GaN
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
Cite this
Optical characterization of magnesium incorporation in p-GaN layers for core-shell nanorod light-emitting diodes. / Gîrgel, I.; Šatka, A.; Priesol, J.; Coulon, P. M.; Le Boulbar, E. D.; Batten, T.; Allsopp, D. W.E.; Shields, P. A.
In: Journal of Physics D: Applied Physics, Vol. 51, No. 15, 155103, 20.03.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optical characterization of magnesium incorporation in p-GaN layers for core-shell nanorod light-emitting diodes
AU - Gîrgel, I.
AU - Šatka, A.
AU - Priesol, J.
AU - Coulon, P. M.
AU - Le Boulbar, E. D.
AU - Batten, T.
AU - Allsopp, D. W.E.
AU - Shields, P. A.
PY - 2018/3/20
Y1 - 2018/3/20
N2 - III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance-voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core-shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core-shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core-shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.
AB - III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance-voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core-shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core-shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core-shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.
KW - cathodoluminescence
KW - core-shell
KW - doping
KW - EBIC
KW - nanorod
KW - p-GaN
UR - http://www.scopus.com/inward/record.url?scp=85044840778&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/aab16b
DO - 10.1088/1361-6463/aab16b
M3 - Article
VL - 51
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 15
M1 - 155103
ER -