III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance-voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core-shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core-shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core-shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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- Department of Electronic & Electrical Engineering - Senior Lecturer
- Centre for Nanoscience and Nanotechnology
- Centre for Sustainable and Circular Technologies (CSCT)
- Condensed Matter Physics CDT
- Electronics Materials, Circuits & Systems Research Unit (EMaCS)
- Centre for Integrated Materials, Processes & Structures (IMPS)
Person: Research & Teaching, Core staff
Dataset for Optical characterization of magnesium incorporation in p-GaN layers for core-shell nanorods
Girgel, I. (Creator), Šatka, A. (Creator), Priesol, J. (Creator), Coulon, P. (Creator), Le Boulbar, E. (Creator), Batten, T. (Creator), Allsopp, D. (Creator) & Shields, P. (Creator), University of Bath, 27 Mar 2018