Abstract
In this work we investigate optical properties of SLS-ELA poly-Si films. UV-visible spectroscopy yielded the film refractive index n and extinction coefficient k. We also employed spectroscopic ellipsometry measurements. All SLS-ELA films showed similar behavior with respect to their optical properties, however very different from a-Si and c-Si. The XRD spectra acquired exhibited a prevailing peak angle at around 21.5°, which, according to literature, corresponds to a Si modification named allo-Si. The above indicate that possibly SLS-ELA Si films have a crystallographic structure similar to allo-Si.
| Original language | English |
|---|---|
| Pages (from-to) | 69-71 |
| Number of pages | 3 |
| Journal | Microelectronic Engineering |
| Volume | 90 |
| DOIs | |
| Publication status | Published - Feb 2012 |
Keywords
- Allo-Si
- Optical characterization
- Poly-Si
- Polysilcon SLS ELA
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Fingerprint
Dive into the research topics of 'On the optical properties of SLS ELA polycrystalline silicon films'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS