On the optical properties of SLS ELA polycrystalline silicon films

Despina C. Moschou; Nikolaos Vourdas; Dimitrios Davazoglou; Dimitrios N. Kouvatsos; Vassilis Emm Vamvakas; Apostolos T. Voutsas

doi:10.1016/j.mee.2011.04.032

On the optical properties of SLS ELA polycrystalline silicon films

Despina C. Moschou, Nikolaos Vourdas, Dimitrios Davazoglou, Dimitrios N. Kouvatsos, Vassilis Emm Vamvakas, Apostolos T. Voutsas

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

Abstract

In this work we investigate optical properties of SLS-ELA poly-Si films. UV-visible spectroscopy yielded the film refractive index n and extinction coefficient k. We also employed spectroscopic ellipsometry measurements. All SLS-ELA films showed similar behavior with respect to their optical properties, however very different from a-Si and c-Si. The XRD spectra acquired exhibited a prevailing peak angle at around 21.5°, which, according to literature, corresponds to a Si modification named allo-Si. The above indicate that possibly SLS-ELA Si films have a crystallographic structure similar to allo-Si.

Original language	English
Pages (from-to)	69-71
Number of pages	3
Journal	Microelectronic Engineering
Volume	90
DOIs	https://doi.org/10.1016/j.mee.2011.04.032
Publication status	Published - Feb 2012

Keywords

Allo-Si
Optical characterization
Poly-Si
Polysilcon SLS ELA

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.mee.2011.04.032

https://doi.org/10.1016/j.mee.2011.04.032

Cite this

@article{4a3b2c16efb640be97477505f551aeff,

title = "On the optical properties of SLS ELA polycrystalline silicon films",

abstract = "In this work we investigate optical properties of SLS-ELA poly-Si films. UV-visible spectroscopy yielded the film refractive index n and extinction coefficient k. We also employed spectroscopic ellipsometry measurements. All SLS-ELA films showed similar behavior with respect to their optical properties, however very different from a-Si and c-Si. The XRD spectra acquired exhibited a prevailing peak angle at around 21.5°, which, according to literature, corresponds to a Si modification named allo-Si. The above indicate that possibly SLS-ELA Si films have a crystallographic structure similar to allo-Si.",

keywords = "Allo-Si, Optical characterization, Poly-Si, Polysilcon SLS ELA",

author = "Moschou, {Despina C.} and Nikolaos Vourdas and Dimitrios Davazoglou and Kouvatsos, {Dimitrios N.} and Vamvakas, {Vassilis Emm} and Voutsas, {Apostolos T.}",

year = "2012",

month = feb,

doi = "10.1016/j.mee.2011.04.032",

language = "English",

volume = "90",

pages = "69--71",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - On the optical properties of SLS ELA polycrystalline silicon films

AU - Moschou, Despina C.

AU - Vourdas, Nikolaos

AU - Davazoglou, Dimitrios

AU - Kouvatsos, Dimitrios N.

AU - Vamvakas, Vassilis Emm

AU - Voutsas, Apostolos T.

PY - 2012/2

Y1 - 2012/2

N2 - In this work we investigate optical properties of SLS-ELA poly-Si films. UV-visible spectroscopy yielded the film refractive index n and extinction coefficient k. We also employed spectroscopic ellipsometry measurements. All SLS-ELA films showed similar behavior with respect to their optical properties, however very different from a-Si and c-Si. The XRD spectra acquired exhibited a prevailing peak angle at around 21.5°, which, according to literature, corresponds to a Si modification named allo-Si. The above indicate that possibly SLS-ELA Si films have a crystallographic structure similar to allo-Si.

AB - In this work we investigate optical properties of SLS-ELA poly-Si films. UV-visible spectroscopy yielded the film refractive index n and extinction coefficient k. We also employed spectroscopic ellipsometry measurements. All SLS-ELA films showed similar behavior with respect to their optical properties, however very different from a-Si and c-Si. The XRD spectra acquired exhibited a prevailing peak angle at around 21.5°, which, according to literature, corresponds to a Si modification named allo-Si. The above indicate that possibly SLS-ELA Si films have a crystallographic structure similar to allo-Si.

KW - Allo-Si

KW - Optical characterization

KW - Poly-Si

KW - Polysilcon SLS ELA

UR - http://www.scopus.com/inward/record.url?scp=82555174454&partnerID=8YFLogxK

UR - https://doi.org/10.1016/j.mee.2011.04.032

U2 - 10.1016/j.mee.2011.04.032

DO - 10.1016/j.mee.2011.04.032

M3 - Article

AN - SCOPUS:82555174454

SN - 0167-9317

VL - 90

SP - 69

EP - 71

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

On the optical properties of SLS ELA polycrystalline silicon films

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this