Observation of early to full covering stages of ethylene-based CVD of graphene

K. Celebi, J. W. Choi, M. T. Cole, A. O. Altun, Kenneth B.K. Teo, H. G. Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Scalable growth is essential for graphene-based applications. Recent development has enabled the achievement of the scalability by use of chemical vapor deposition (CVD) at 1000°C with copper as a catalyst and methane as a precursor gas. Here we report our observation of early stage of graphene growth based on an ethylene-based CVD method, capable of reducing the growth temperature to 770°C for monolayer graphene growth on copper. We track the early stages of slow growth under low ethylene flow rate and observe the graphene domain evolution by varying the temperature and growth time. Temperature-dependence of graphene domain density gives an apparent activation energy of 1.0 eV for nucleation.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages180-183
Number of pages4
Publication statusPublished - 2012
EventNanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, USA United States
Duration: 18 Jun 201221 Jun 2012

Conference

ConferenceNanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUSA United States
CitySanta Clara, CA
Period18/06/1221/06/12

Keywords

  • CVD
  • Ethylene
  • Graphene
  • Nucleation

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

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