Observation of early to full covering stages of ethylene-based CVD of graphene

K. Celebi; J. W. Choi; M. T. Cole; A. O. Altun; Kenneth B.K. Teo; H. G. Park

Observation of early to full covering stages of ethylene-based CVD of graphene

K. Celebi, J. W. Choi, M. T. Cole, A. O. Altun, Kenneth B.K. Teo, H. G. Park

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

Scalable growth is essential for graphene-based applications. Recent development has enabled the achievement of the scalability by use of chemical vapor deposition (CVD) at 1000°C with copper as a catalyst and methane as a precursor gas. Here we report our observation of early stage of graphene growth based on an ethylene-based CVD method, capable of reducing the growth temperature to 770°C for monolayer graphene growth on copper. We track the early stages of slow growth under low ethylene flow rate and observe the graphene domain evolution by varying the temperature and growth time. Temperature-dependence of graphene domain density gives an apparent activation energy of 1.0 eV for nucleation.

Original language	English
Title of host publication	Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages	180-183
Number of pages	4
Publication status	Published - 2012
Event	Nanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, USA United States Duration: 18 Jun 2012 → 21 Jun 2012

Conference

Conference	Nanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Country/Territory	USA United States
City	Santa Clara, CA
Period	18/06/12 → 21/06/12

Keywords

CVD
Ethylene
Graphene
Nucleation

ASJC Scopus subject areas

Ceramics and Composites
Surfaces, Coatings and Films

Cite this

Celebi, K, Choi, JW, Cole, MT, Altun, AO, Teo, KBK & Park, HG 2012, Observation of early to full covering stages of ethylene-based CVD of graphene. in Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. pp. 180-183, Nanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, USA United States, 18/06/12.

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abstract = "Scalable growth is essential for graphene-based applications. Recent development has enabled the achievement of the scalability by use of chemical vapor deposition (CVD) at 1000°C with copper as a catalyst and methane as a precursor gas. Here we report our observation of early stage of graphene growth based on an ethylene-based CVD method, capable of reducing the growth temperature to 770°C for monolayer graphene growth on copper. We track the early stages of slow growth under low ethylene flow rate and observe the graphene domain evolution by varying the temperature and growth time. Temperature-dependence of graphene domain density gives an apparent activation energy of 1.0 eV for nucleation.",

keywords = "CVD, Ethylene, Graphene, Nucleation",

author = "K. Celebi and Choi, {J. W.} and Cole, {M. T.} and Altun, {A. O.} and Teo, {Kenneth B.K.} and Park, {H. G.}",

year = "2012",

language = "English",

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pages = "180--183",

booktitle = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",

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T1 - Observation of early to full covering stages of ethylene-based CVD of graphene

AU - Celebi, K.

AU - Choi, J. W.

AU - Cole, M. T.

AU - Altun, A. O.

AU - Teo, Kenneth B.K.

AU - Park, H. G.

PY - 2012

Y1 - 2012

N2 - Scalable growth is essential for graphene-based applications. Recent development has enabled the achievement of the scalability by use of chemical vapor deposition (CVD) at 1000°C with copper as a catalyst and methane as a precursor gas. Here we report our observation of early stage of graphene growth based on an ethylene-based CVD method, capable of reducing the growth temperature to 770°C for monolayer graphene growth on copper. We track the early stages of slow growth under low ethylene flow rate and observe the graphene domain evolution by varying the temperature and growth time. Temperature-dependence of graphene domain density gives an apparent activation energy of 1.0 eV for nucleation.

AB - Scalable growth is essential for graphene-based applications. Recent development has enabled the achievement of the scalability by use of chemical vapor deposition (CVD) at 1000°C with copper as a catalyst and methane as a precursor gas. Here we report our observation of early stage of graphene growth based on an ethylene-based CVD method, capable of reducing the growth temperature to 770°C for monolayer graphene growth on copper. We track the early stages of slow growth under low ethylene flow rate and observe the graphene domain evolution by varying the temperature and growth time. Temperature-dependence of graphene domain density gives an apparent activation energy of 1.0 eV for nucleation.

KW - CVD

KW - Ethylene

KW - Graphene

KW - Nucleation

UR - http://www.scopus.com/inward/record.url?scp=84864984677&partnerID=8YFLogxK

M3 - Chapter in a published conference proceeding

AN - SCOPUS:84864984677

SN - 9781466562745

SP - 180

EP - 183

BT - Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

T2 - Nanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Y2 - 18 June 2012 through 21 June 2012

ER -

Observation of early to full covering stages of ethylene-based CVD of graphene

Abstract

Conference

Keywords

ASJC Scopus subject areas

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