Abstract
This paper reports a theoretical model for Dicke Superradiance in semiconductor laser devices. Simulations agree well with previously-observed superradiance properties and are used to optimize driving conditions and device geometry.
| Original language | English |
|---|---|
| Title of host publication | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2011 |
| Publication status | Published - 1 Dec 2011 |
| Event | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2011 - Toronto, Canada Duration: 12 Jun 2011 → 15 Jun 2011 |
Conference
| Conference | Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2011 |
|---|---|
| Country/Territory | Canada |
| City | Toronto |
| Period | 12/06/11 → 15/06/11 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics
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