Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light-electron microscopy

G. Naresh-Kumar, P. R. Edwards, T. Batten, M. Nouf-Allehiani, A. Vilalta-Clemente, A. J. Wilkinson, E. Le Boulbar, P. A. Shields, B. Starosta, B. Hourahine, R. W. Martin, C. Trager-Cowan

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate a non-destructive approach to understanding the growth modes of a GaN thin film and simultaneously quantify its residual strains and their effect on optical and electrical properties using correlative scanning electron microscopy techniques and Raman microscopy. Coincident strain maps derived from electron backscatter diffraction, cathodoluminescence, and confocal Raman techniques reveal strain variations with similar magnitude and directions, especially in the proximity of dislocations. Correlating confocal Raman imaging with electron channeling contrast imaging suggests that the dislocations organize themselves to form a distinctive pattern as a result of the underlying growth mask, where some of them align along the [0001] growth direction and some are inclined. The methodology presented in this work can be adopted to investigate any heteroepitaxial growth, in particular, those using selective masks on the growth substrates, where the morphology influences the subsequent growth.

Original languageEnglish
Article number075303
JournalJournal of Applied Physics
Volume131
Issue number7
Early online date16 Feb 2022
DOIs
Publication statusPublished - 21 Feb 2022

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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