Projects per year
Abstract
We demonstrate a non-destructive approach to understanding the growth modes of a GaN thin film and simultaneously quantify its residual strains and their effect on optical and electrical properties using correlative scanning electron microscopy techniques and Raman microscopy. Coincident strain maps derived from electron backscatter diffraction, cathodoluminescence, and confocal Raman techniques reveal strain variations with similar magnitude and directions, especially in the proximity of dislocations. Correlating confocal Raman imaging with electron channeling contrast imaging suggests that the dislocations organize themselves to form a distinctive pattern as a result of the underlying growth mask, where some of them align along the [0001] growth direction and some are inclined. The methodology presented in this work can be adopted to investigate any heteroepitaxial growth, in particular, those using selective masks on the growth substrates, where the morphology influences the subsequent growth.
Original language | English |
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Article number | 075303 |
Journal | Journal of Applied Physics |
Volume | 131 |
Issue number | 7 |
Early online date | 16 Feb 2022 |
DOIs | |
Publication status | Published - 21 Feb 2022 |
Bibliographical note
Funding Information:This work was supported by the EPSRC projects “Quantitative non-destructive nanoscale characterization of advanced materials” (No. EP/P015719/1), “Manufacturing of nano-engineered III-N semiconductors” (No. EP/M022862/1), and “Nanoscale characterization of nitride semiconductor thin films using EBSD, ECCI, CL, and EBIC” (Nos. EP/J015792/1 and EP/J016098/1).
Funding
This work was supported by the EPSRC projects “Quantitative non-destructive nanoscale characterization of advanced materials” (No. EP/P015719/1), “Manufacturing of nano-engineered III-N semiconductors” (No. EP/M022862/1), and “Nanoscale characterization of nitride semiconductor thin films using EBSD, ECCI, CL, and EBIC” (Nos. EP/J015792/1 and EP/J016098/1).
ASJC Scopus subject areas
- General Physics and Astronomy
Fingerprint
Dive into the research topics of 'Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light-electron microscopy: ORCID logo ; B. Starosta ORCID logo ; B. Hourahine ORCID logo ; R. W. Martin ORCID logo ; C. Trager-Cowan ORCID logo'. Together they form a unique fingerprint.Projects
- 2 Finished
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Manufacturing of Nano-Engineered III-N Semiconductors
Shields, P. (PI), Allsopp, D. (CoI) & Wang, W. (CoI)
Engineering and Physical Sciences Research Council
1/05/15 → 30/09/21
Project: Research council
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Manufacturing of Nano-Engineered III-N Semiconductors - Equipment
Shields, P. (PI) & Allsopp, D. (CoI)
Engineering and Physical Sciences Research Council
1/02/15 → 31/01/20
Project: Research council
Equipment
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Raman confocal microscope RENISHAM INVIA
Material and Chemical Characterisation (MC2)Facility/equipment: Equipment