Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel

Thomas Pugh; Joe C. Goodall; Kieran  C. Molloy; Andrew L. Johnson

doi:10.1021/acs.inorgchem.5c01934

Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel

Thomas Pugh
, Joe C. Goodall
, Kieran C. Molloy
, Andrew L. Johnson

Research output: Contribution to journal › Article › peer-review

1 Citation (SciVal)

Abstract

We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm cf. 6.93 μΩ·cm), exhibit shallow surface features (ca. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.

Original language	English
Pages (from-to)	13897-13904
Number of pages	8
Journal	Inorganic Chemistry
Volume	64
Issue number	27
Early online date	30 Jun 2025
DOIs	https://doi.org/10.1021/acs.inorgchem.5c01934
Publication status	Published - 14 Jul 2025

Funding

We acknowledge the financial support of the University of Bath and SAFC-Hitech for case-award support for T.P.

Funders
University of Bath

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 12 Responsible Consumption and Production

Keywords

Chemical Vapor Deposition
X-Ray Diffraction
Nickel
Precursor
Thin Film

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Inorganic Chemistry

Access to Document

10.1021/acs.inorgchem.5c01934Licence: CC BY

Cite this

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title = "Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel",

abstract = "We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at\%), resistivity comparable to bulk nickel (7-23 μΩ·cm cf. 6.93 μΩ·cm), exhibit shallow surface features (ca. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.",

keywords = "Chemical Vapor Deposition, X-Ray Diffraction, Nickel, Precursor, Thin Film",

author = "Thomas Pugh and Goodall, \{Joe C.\} and Molloy, \{Kieran C.\} and Johnson, \{Andrew L.\}",

year = "2025",

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doi = "10.1021/acs.inorgchem.5c01934",

language = "English",

volume = "64",

pages = "13897--13904",

journal = "Inorganic Chemistry",

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publisher = "American Chemical Society",

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TY - JOUR

T1 - Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel

AU - Pugh, Thomas

AU - Goodall, Joe C.

AU - Molloy, Kieran C.

AU - Johnson, Andrew L.

PY - 2025/7/14

Y1 - 2025/7/14

N2 - We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm cf. 6.93 μΩ·cm), exhibit shallow surface features (ca. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.

AB - We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm cf. 6.93 μΩ·cm), exhibit shallow surface features (ca. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.

KW - Chemical Vapor Deposition

KW - X-Ray Diffraction

KW - Nickel

KW - Precursor

KW - Thin Film

UR - https://www.scopus.com/pages/publications/105009747753

U2 - 10.1021/acs.inorgchem.5c01934

DO - 10.1021/acs.inorgchem.5c01934

M3 - Article

SN - 0020-1669

VL - 64

SP - 13897

EP - 13904

JO - Inorganic Chemistry

JF - Inorganic Chemistry

IS - 27

ER -

Nickel Pyrrolide Complexes as Precursors for the Chemical Vapor Deposition of Metallic Thin Films of Nickel

Abstract

Funding

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

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