Abstract
We report here the synthesis of a novel class of precursors for the chemical vapor deposition (CVD) of thin films of metallic, face-centered cubic (fcc) nickel. The complexes are simple and inexpensive to synthesize, possess high volatility (vapor pressure = 0.1 Torr at 40 °C), and enable rapid deposition rates of nickel under CVD conditions (up to 6.5 nm/min at 250 °C). We show that the deposited nickel films have high elemental purity (>99 at%), resistivity comparable to bulk nickel (7-23 μΩ·cm cf. 6.93 μΩ·cm), exhibit shallow surface features (ca. ± 10 nm), and very low surface roughness (RMS = 2.72 nm). These data compare favorably with those of the current state-of-the-art metallic nickel CVD precursors.
Original language | English |
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Pages (from-to) | 13897-13904 |
Journal | Inorganic Chemistry |
Volume | 64 |
Issue number | 27 |
Early online date | 30 Jun 2025 |
DOIs | |
Publication status | Published - 14 Jul 2025 |
Funding
We acknowledge the financial support of the University of Bath and SAFC-Hitech for case-award support for T.P.
Funders | Funder number |
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University of Bath |
Keywords
- Chemical Vapor Deposition
- X-Ray Diffraction
- Nickel
- Precursor
- Thin Film
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Inorganic Chemistry