New precursors to group 13 nitrides

Michael Hill; Jolin Jegier; Miguel Angel Munoz-Hernandez; Drew Rutherford; Amy Singer; David Atwood

doi:10.1080/10426509708545623

New precursors to group 13 nitrides

Michael Hill, Jolin Jegier, Miguel Angel Munoz-Hernandez, Drew Rutherford, Amy Singer, David Atwood

North Dakota State University

Research output: Contribution to journal › Article › peer-review

4 Citations (SciVal)

Abstract

In searching for ideal unimolecular precursors to group 13 nitrides we have begun examining two new classes of molecules having the formulae, R_nM(tet)_3-n (n = 0, 1, 2) and Bn₂MN₃ (where M = A1, Ga; tet = 5-phenyl-1H-tetrazole, and Bn= benzyl). These may be anticipated to undergo low-temperature decompositions according to equations 1 and 2, respectively. The absence of carbon bonds to the nitrogen ultimately incorporated into the material, as well as the presence of excess nitrogen are viewed as particularly advantageous. Preliminary results focused on the formation of aluminum nitride are presented herein. M(tet)₃ → MN + N₂ + PhCN (1) Bn₂MN₃ → MN + N₂ + Bn₂ (2).

Original language	English
Pages (from-to)	183-192
Number of pages	10
Journal	Phosphorus, Sulfur and Silicon and Related Elements
Volume	124
DOIs	https://doi.org/10.1080/10426509708545623
Publication status	Published - 1 Jan 1997

Keywords

Aluminum nitride
Precursor

ASJC Scopus subject areas

Biochemistry
Organic Chemistry
Inorganic Chemistry

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10.1080/10426509708545623

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@article{ad1864c7594d41d090b040b81690715d,

title = "New precursors to group 13 nitrides",

abstract = "In searching for ideal unimolecular precursors to group 13 nitrides we have begun examining two new classes of molecules having the formulae, RnM(tet)3-n (n = 0, 1, 2) and Bn2MN3 (where M = A1, Ga; tet = 5-phenyl-1H-tetrazole, and Bn= benzyl). These may be anticipated to undergo low-temperature decompositions according to equations 1 and 2, respectively. The absence of carbon bonds to the nitrogen ultimately incorporated into the material, as well as the presence of excess nitrogen are viewed as particularly advantageous. Preliminary results focused on the formation of aluminum nitride are presented herein. M(tet)3 → MN + N2 + PhCN (1) Bn2MN3 → MN + N2 + Bn2 (2).",

keywords = "Aluminum nitride, Precursor",

author = "Michael Hill and Jolin Jegier and Munoz-Hernandez, {Miguel Angel} and Drew Rutherford and Amy Singer and David Atwood",

year = "1997",

month = jan,

day = "1",

doi = "10.1080/10426509708545623",

language = "English",

volume = "124",

pages = "183--192",

journal = "Phosphorus, Sulfur and Silicon and Related Elements",

issn = "1042-6507",

publisher = "Taylor and Francis",

}

TY - JOUR

T1 - New precursors to group 13 nitrides

AU - Hill, Michael

AU - Jegier, Jolin

AU - Munoz-Hernandez, Miguel Angel

AU - Rutherford, Drew

AU - Singer, Amy

AU - Atwood, David

PY - 1997/1/1

Y1 - 1997/1/1

N2 - In searching for ideal unimolecular precursors to group 13 nitrides we have begun examining two new classes of molecules having the formulae, RnM(tet)3-n (n = 0, 1, 2) and Bn2MN3 (where M = A1, Ga; tet = 5-phenyl-1H-tetrazole, and Bn= benzyl). These may be anticipated to undergo low-temperature decompositions according to equations 1 and 2, respectively. The absence of carbon bonds to the nitrogen ultimately incorporated into the material, as well as the presence of excess nitrogen are viewed as particularly advantageous. Preliminary results focused on the formation of aluminum nitride are presented herein. M(tet)3 → MN + N2 + PhCN (1) Bn2MN3 → MN + N2 + Bn2 (2).

AB - In searching for ideal unimolecular precursors to group 13 nitrides we have begun examining two new classes of molecules having the formulae, RnM(tet)3-n (n = 0, 1, 2) and Bn2MN3 (where M = A1, Ga; tet = 5-phenyl-1H-tetrazole, and Bn= benzyl). These may be anticipated to undergo low-temperature decompositions according to equations 1 and 2, respectively. The absence of carbon bonds to the nitrogen ultimately incorporated into the material, as well as the presence of excess nitrogen are viewed as particularly advantageous. Preliminary results focused on the formation of aluminum nitride are presented herein. M(tet)3 → MN + N2 + PhCN (1) Bn2MN3 → MN + N2 + Bn2 (2).

KW - Aluminum nitride

KW - Precursor

UR - http://www.scopus.com/inward/record.url?scp=0006840080&partnerID=8YFLogxK

U2 - 10.1080/10426509708545623

DO - 10.1080/10426509708545623

M3 - Article

AN - SCOPUS:0006840080

SN - 1042-6507

VL - 124

SP - 183

EP - 192

JO - Phosphorus, Sulfur and Silicon and Related Elements

JF - Phosphorus, Sulfur and Silicon and Related Elements

ER -

New precursors to group 13 nitrides

Abstract

Keywords

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