New electronic memory device concepts based on metal oxide-polymer nanostructures planer diodes

Asal Kiazadeh, Paulo R F Rocha, Qian Chen, Henrique L. Gomes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Planar diodes fabricated with nano-structured silver oxide thin film show resistive switching effects. These structures can be programmed by voltage into two distinct resistive states and they are promising candidates for resistive random access memory (RRAM) devices. Cycle endurance on/off ration and charge retention are high. This wok provides insight into the mechanisms leading to the memory effects and to charge transport in these memory structures. Temperature dependent measurements show that charge carrier transport has activation energy of 70 meV suggesting that tunneling is the operating mechanism in both resistive states. The change in resistance is caused by a large increase in charge carrier density. This finding is explained by assuming that carrier transport takes place through a percolative network of micro-conducting paths.

Original languageEnglish
Title of host publicationTechnological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings
Pages521-526
Number of pages6
Volume372 AICT
DOIs
Publication statusPublished - 2012
Event3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012 - Costa de Caparica, Portugal
Duration: 27 Feb 201229 Feb 2012

Publication series

NameIFIP Advances in Information and Communication Technology
Volume372 AICT
ISSN (Print)18684238

Conference

Conference3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012
CountryPortugal
CityCosta de Caparica
Period27/02/1229/02/12

Keywords

  • Nanostructured Materials
  • Resistive Switching

ASJC Scopus subject areas

  • Information Systems and Management

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  • Cite this

    Kiazadeh, A., Rocha, P. R. F., Chen, Q., & Gomes, H. L. (2012). New electronic memory device concepts based on metal oxide-polymer nanostructures planer diodes. In Technological Innovation for Value Creation - Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, Proceedings (Vol. 372 AICT, pp. 521-526). (IFIP Advances in Information and Communication Technology; Vol. 372 AICT). https://doi.org/10.1007/978-3-642-28255-3_57