Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 65-68 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 47 |
| Issue number | 1 - 4 |
| DOIs | |
| Publication status | Published - Jun 1999 |
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New developments in superlattice transport: quenching of miniband conduction in high magnetic fields. / Murphy, H; Eaves, L; Nogaret, Alain; Stoddart, S; main, pc; Henini, M; Mori, N; Hamaguchi, C; Maude, D K; Portal, Jean-Claude.
In: Microelectronic Engineering, Vol. 47, No. 1 - 4, 06.1999, p. 65-68.Research output: Contribution to journal › Article
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TY - JOUR
T1 - New developments in superlattice transport: quenching of miniband conduction in high magnetic fields
AU - Murphy, H
AU - Eaves, L
AU - Nogaret, Alain
AU - Stoddart, S
AU - main, pc
AU - Henini, M
AU - Mori, N
AU - Hamaguchi, C
AU - Maude, D K
AU - Portal, Jean-Claude
PY - 1999/6
Y1 - 1999/6
N2 - DC miniband transport is studied in undoped GaAs/AlxGa1−xAs superlattices at low temperatures and at high magnetic fields applied perpendicular to the tunnel barriers. A strong suppression of miniband conduction is observed under these conditions. We propose a qualitative semi-classical Drude model to explain the observed results.
AB - DC miniband transport is studied in undoped GaAs/AlxGa1−xAs superlattices at low temperatures and at high magnetic fields applied perpendicular to the tunnel barriers. A strong suppression of miniband conduction is observed under these conditions. We propose a qualitative semi-classical Drude model to explain the observed results.
U2 - 10.1016/S0167-9317(99)00149-5
DO - 10.1016/S0167-9317(99)00149-5
M3 - Article
VL - 47
SP - 65
EP - 68
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 1 - 4
ER -