New developments in superlattice transport: quenching of miniband conduction in high magnetic fields

H Murphy; L Eaves; Alain Nogaret; S Stoddart; pc main; M Henini; N Mori; C Hamaguchi; D K Maude; Jean-Claude Portal

doi:10.1016/S0167-9317(99)00149-5

New developments in superlattice transport: quenching of miniband conduction in high magnetic fields

H Murphy, L Eaves, Alain Nogaret, S Stoddart, pc main, M Henini, N Mori, C Hamaguchi, D K Maude, Jean-Claude Portal

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

DC miniband transport is studied in undoped GaAs/AlxGa1−xAs superlattices at low temperatures and at high magnetic fields applied perpendicular to the tunnel barriers. A strong suppression of miniband conduction is observed under these conditions. We propose a qualitative semi-classical Drude model to explain the observed results.

Original language	English
Pages (from-to)	65-68
Number of pages	4
Journal	Microelectronic Engineering
Volume	47
Issue number	1 - 4
DOIs	https://doi.org/10.1016/S0167-9317(99)00149-5
Publication status	Published - Jun 1999

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@article{5714b7dccd284ab686435e414f379d3b,

title = "New developments in superlattice transport: quenching of miniband conduction in high magnetic fields",

abstract = "DC miniband transport is studied in undoped GaAs/AlxGa1−xAs superlattices at low temperatures and at high magnetic fields applied perpendicular to the tunnel barriers. A strong suppression of miniband conduction is observed under these conditions. We propose a qualitative semi-classical Drude model to explain the observed results.",

author = "H Murphy and L Eaves and Alain Nogaret and S Stoddart and pc main and M Henini and N Mori and C Hamaguchi and Maude, {D K} and Jean-Claude Portal",

year = "1999",

month = jun,

doi = "10.1016/S0167-9317(99)00149-5",

language = "English",

volume = "47",

pages = "65--68",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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T1 - New developments in superlattice transport: quenching of miniband conduction in high magnetic fields

AU - Murphy, H

AU - Eaves, L

AU - Nogaret, Alain

AU - Stoddart, S

AU - main, pc

AU - Henini, M

AU - Mori, N

AU - Hamaguchi, C

AU - Maude, D K

AU - Portal, Jean-Claude

PY - 1999/6

Y1 - 1999/6

N2 - DC miniband transport is studied in undoped GaAs/AlxGa1−xAs superlattices at low temperatures and at high magnetic fields applied perpendicular to the tunnel barriers. A strong suppression of miniband conduction is observed under these conditions. We propose a qualitative semi-classical Drude model to explain the observed results.

AB - DC miniband transport is studied in undoped GaAs/AlxGa1−xAs superlattices at low temperatures and at high magnetic fields applied perpendicular to the tunnel barriers. A strong suppression of miniband conduction is observed under these conditions. We propose a qualitative semi-classical Drude model to explain the observed results.

U2 - 10.1016/S0167-9317(99)00149-5

DO - 10.1016/S0167-9317(99)00149-5

M3 - Article

VL - 47

SP - 65

EP - 68

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1 - 4

ER -