TY - JOUR
T1 - Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands
AU - Takashina, Kei
AU - Niida, Y
AU - Renard, V T
AU - Fujiwara, A
AU - Fujisawa, T
AU - Hirayama, Y
PY - 2009
Y1 - 2009
N2 - We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.
AB - We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.
UR - http://www.scopus.com/inward/record.url?scp=68149131981&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1142/S021797920906258X
U2 - 10.1142/S021797920906258X
DO - 10.1142/S021797920906258X
M3 - Article
SN - 0217-9792
VL - 23
SP - 2938
EP - 2942
JO - International Journal of Modern Physics B
JF - International Journal of Modern Physics B
IS - 12 & 13
ER -