Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands

Kei Takashina, Y Niida, V T Renard, A Fujiwara, T Fujisawa, Y Hirayama

Research output: Contribution to journalArticle

Abstract

We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.
Original languageEnglish
Pages (from-to)2938-2942
Number of pages5
JournalInternational Journal of Modern Physics B
Volume23
Issue number12 & 13
DOIs
Publication statusPublished - 2009

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valleys
silicon
magnetic fields
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polarization

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Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands. / Takashina, Kei; Niida, Y; Renard, V T; Fujiwara, A; Fujisawa, T; Hirayama, Y.

In: International Journal of Modern Physics B, Vol. 23, No. 12 & 13, 2009, p. 2938-2942.

Research output: Contribution to journalArticle

Takashina, Kei ; Niida, Y ; Renard, V T ; Fujiwara, A ; Fujisawa, T ; Hirayama, Y. / Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands. In: International Journal of Modern Physics B. 2009 ; Vol. 23, No. 12 & 13. pp. 2938-2942.
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