Negative Differential Resistance in van der Waals Heterostructures Due to Moiré-Induced Spectral Reconstruction

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Abstract

Formation of moiré superlattices is common in van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. Here we discuss theoretically electron transport in a van der Waals tunneling transistor in which one or both of the electrodes are made of two crystals forming a moiré superlattice at their interface. As a proof of concept, we investigate structures containing either an aligned graphene/hexagonal boron nitride heterostructure or twisted-bilayer graphene and show that negative differential resistance is possible in such transistors and that this arises as a consequence of the superlattice-induced changes in the electronic density of states and without the need for momentum-conserving tunneling present in high-quality exfoliated devices. We extend this concept to a device with electrodes consisting of aligned graphene on α-In2Te2 and demonstrate negative-differential-resistance peak-to-valley ratios of approximately 10.

LanguageEnglish
Article number034014
Pages1-9
Number of pages9
JournalPhysical Review Applied
Volume10
Issue number3
Early online date7 Sep 2018
DOIs
StatusPublished - 30 Sep 2018

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graphene
transistors
electrodes
boron nitrides
misalignment
crystals
valleys
superlattices
electronics
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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title = "Negative Differential Resistance in van der Waals Heterostructures Due to Moir{\'e}-Induced Spectral Reconstruction",
abstract = "Formation of moir{\'e} superlattices is common in van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. Here we discuss theoretically electron transport in a van der Waals tunneling transistor in which one or both of the electrodes are made of two crystals forming a moir{\'e} superlattice at their interface. As a proof of concept, we investigate structures containing either an aligned graphene/hexagonal boron nitride heterostructure or twisted-bilayer graphene and show that negative differential resistance is possible in such transistors and that this arises as a consequence of the superlattice-induced changes in the electronic density of states and without the need for momentum-conserving tunneling present in high-quality exfoliated devices. We extend this concept to a device with electrodes consisting of aligned graphene on α-In2Te2 and demonstrate negative-differential-resistance peak-to-valley ratios of approximately 10.",
author = "Leech, {Damien J.} and Thompson, {Joshua J. P.} and Marcin Mucha-Kruczynski",
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AU - Leech, Damien J.

AU - Thompson, Joshua J. P.

AU - Mucha-Kruczynski, Marcin

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AB - Formation of moiré superlattices is common in van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. Here we discuss theoretically electron transport in a van der Waals tunneling transistor in which one or both of the electrodes are made of two crystals forming a moiré superlattice at their interface. As a proof of concept, we investigate structures containing either an aligned graphene/hexagonal boron nitride heterostructure or twisted-bilayer graphene and show that negative differential resistance is possible in such transistors and that this arises as a consequence of the superlattice-induced changes in the electronic density of states and without the need for momentum-conserving tunneling present in high-quality exfoliated devices. We extend this concept to a device with electrodes consisting of aligned graphene on α-In2Te2 and demonstrate negative-differential-resistance peak-to-valley ratios of approximately 10.

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