Negative differential conductance materials for flexible electronics

Research output: Contribution to journalArticle

6 Citations (Scopus)
104 Downloads (Pure)

Abstract

The need for electronics that is compatible with life is driving the search for electronically active materials that may be used for transferring integrated circuits onto flexible substrates. One route is to build transistors, which modulate the conductivity of organic thin films with a lateral gate. However, as is well known in the case of graphene, the in-plane conductivity cannot easily be switched off. Another route is to use negative differential resistance (NDR) phenomena. Until recently, NDR was only obtained from band engineered semiconductors. This article reviews the recent development of flexible materials that specifically make use of transport perpendicular to graphite planes to obtain NDR. These materials include h-boron-nitride/graphene multilayers and graphite-silicone composites. We report on the dependence of their current-voltage curves on deformation, changes in structural and experimental parameters. We also describe device implementations in the form of flexible oscillators, amplifiers and memories.
Original languageEnglish
JournalJournal of Applied Polymer Science
Volume131
Issue number24
Early online date20 Nov 2013
DOIs
Publication statusPublished - 15 Dec 2014

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Flexible electronics
Graphite
Graphene
Boron nitride
Silicones
Integrated circuits
Multilayers
Transistors
Electronic equipment
Semiconductor materials
Data storage equipment
Thin films
Composite materials
Electric potential
Substrates

Cite this

Negative differential conductance materials for flexible electronics. / Nogaret, Alain.

In: Journal of Applied Polymer Science, Vol. 131, No. 24, 15.12.2014.

Research output: Contribution to journalArticle

@article{989bfd745005431c91f5b907d2555a9d,
title = "Negative differential conductance materials for flexible electronics",
abstract = "The need for electronics that is compatible with life is driving the search for electronically active materials that may be used for transferring integrated circuits onto flexible substrates. One route is to build transistors, which modulate the conductivity of organic thin films with a lateral gate. However, as is well known in the case of graphene, the in-plane conductivity cannot easily be switched off. Another route is to use negative differential resistance (NDR) phenomena. Until recently, NDR was only obtained from band engineered semiconductors. This article reviews the recent development of flexible materials that specifically make use of transport perpendicular to graphite planes to obtain NDR. These materials include h-boron-nitride/graphene multilayers and graphite-silicone composites. We report on the dependence of their current-voltage curves on deformation, changes in structural and experimental parameters. We also describe device implementations in the form of flexible oscillators, amplifiers and memories.",
author = "Alain Nogaret",
year = "2014",
month = "12",
day = "15",
doi = "10.1002/app.40169",
language = "English",
volume = "131",
journal = "Journal of Applied Polymer Science",
issn = "0021-8995",
publisher = "John Wiley and Sons Inc.",
number = "24",

}

TY - JOUR

T1 - Negative differential conductance materials for flexible electronics

AU - Nogaret, Alain

PY - 2014/12/15

Y1 - 2014/12/15

N2 - The need for electronics that is compatible with life is driving the search for electronically active materials that may be used for transferring integrated circuits onto flexible substrates. One route is to build transistors, which modulate the conductivity of organic thin films with a lateral gate. However, as is well known in the case of graphene, the in-plane conductivity cannot easily be switched off. Another route is to use negative differential resistance (NDR) phenomena. Until recently, NDR was only obtained from band engineered semiconductors. This article reviews the recent development of flexible materials that specifically make use of transport perpendicular to graphite planes to obtain NDR. These materials include h-boron-nitride/graphene multilayers and graphite-silicone composites. We report on the dependence of their current-voltage curves on deformation, changes in structural and experimental parameters. We also describe device implementations in the form of flexible oscillators, amplifiers and memories.

AB - The need for electronics that is compatible with life is driving the search for electronically active materials that may be used for transferring integrated circuits onto flexible substrates. One route is to build transistors, which modulate the conductivity of organic thin films with a lateral gate. However, as is well known in the case of graphene, the in-plane conductivity cannot easily be switched off. Another route is to use negative differential resistance (NDR) phenomena. Until recently, NDR was only obtained from band engineered semiconductors. This article reviews the recent development of flexible materials that specifically make use of transport perpendicular to graphite planes to obtain NDR. These materials include h-boron-nitride/graphene multilayers and graphite-silicone composites. We report on the dependence of their current-voltage curves on deformation, changes in structural and experimental parameters. We also describe device implementations in the form of flexible oscillators, amplifiers and memories.

UR - http://www.scopus.com/inward/record.url?scp=84887752020&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1002/app.40169

U2 - 10.1002/app.40169

DO - 10.1002/app.40169

M3 - Article

VL - 131

JO - Journal of Applied Polymer Science

JF - Journal of Applied Polymer Science

SN - 0021-8995

IS - 24

ER -