Near-field characterization of chemical vapor deposition graphene in the microwave regime

Anestis Katsounaros, Matthew T. Cole, Hatice M. Tuncer, William I. Milne, Yang Hao

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Near-field measurements were performed at X-band frequencies for graphene on copper microstrip transmission lines. An improvement in radiation of 0.88 dB at 10.2 GHz is exhibited from the monolayer graphene antenna which has dc sheet resistivity of 985 Ω/sq. Emission characteristics were validated via ab initio simulations and compared to empirical findings of geometrically comparable copper patches. This study contributes to the current knowledge of the electronic properties of graphene.

Original languageEnglish
Article number233104
JournalApplied Physics Letters
Volume102
Issue number23
DOIs
Publication statusPublished - 10 Jun 2013

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near fields
graphene
vapor deposition
microwaves
microstrip transmission lines
copper
superhigh frequencies
antennas
electrical resistivity
radiation
electronics
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Katsounaros, A., Cole, M. T., Tuncer, H. M., Milne, W. I., & Hao, Y. (2013). Near-field characterization of chemical vapor deposition graphene in the microwave regime. Applied Physics Letters, 102(23), [233104]. https://doi.org/10.1063/1.4810759

Near-field characterization of chemical vapor deposition graphene in the microwave regime. / Katsounaros, Anestis; Cole, Matthew T.; Tuncer, Hatice M.; Milne, William I.; Hao, Yang.

In: Applied Physics Letters, Vol. 102, No. 23, 233104, 10.06.2013.

Research output: Contribution to journalArticle

Katsounaros, Anestis ; Cole, Matthew T. ; Tuncer, Hatice M. ; Milne, William I. ; Hao, Yang. / Near-field characterization of chemical vapor deposition graphene in the microwave regime. In: Applied Physics Letters. 2013 ; Vol. 102, No. 23.
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