TY - JOUR
T1 - Nanopendeo coalescence overgrowth of GaN on etched nanorod array
AU - Shields, Philip
AU - Liu, Chaowang
AU - Atka, Alexander
AU - Trampert, Achim
AU - Zuniga-Perez, Jesus
AU - Alloing, Blandine
AU - Hako, Daniel
AU - Uherek, Frantisek
AU - Wang, Wang
AU - Causa, Federica
AU - Allsopp, Duncan
PY - 2011/7
Y1 - 2011/7
N2 - This paper reports the characteristics of gallium nitride layers that have been grown on top of an etched array of nanorods. Nanoimprint lithography has been used to create nanorods on a wafer-scale that are subsequently passivated to allow selective regrowth from their tips by MOVPE. The first epitaxial growth step favoured lateral growth and the second resulted in a planar coalesced layer of gallium nitride. It was found that smooth planarised overgrowth required careful timing of the growth transition between the two steps and that the crystallographic quality of the overgrown layer was very sensitive to the nanorod template properties, in particular the amount of unpassivated nanorod surface.
AB - This paper reports the characteristics of gallium nitride layers that have been grown on top of an etched array of nanorods. Nanoimprint lithography has been used to create nanorods on a wafer-scale that are subsequently passivated to allow selective regrowth from their tips by MOVPE. The first epitaxial growth step favoured lateral growth and the second resulted in a planar coalesced layer of gallium nitride. It was found that smooth planarised overgrowth required careful timing of the growth transition between the two steps and that the crystallographic quality of the overgrown layer was very sensitive to the nanorod template properties, in particular the amount of unpassivated nanorod surface.
UR - http://www.scopus.com/inward/record.url?scp=79960717037&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1002/pssc.201000996
U2 - 10.1002/pssc.201000996
DO - 10.1002/pssc.201000996
M3 - Article
SN - 1862-6351
VL - 8
SP - 2334
EP - 2336
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 7-8
ER -