Nanoimprint lithography resist profile inversion for lift-off applications

Philip A Shields, Duncan W E Allsopp

Research output: Contribution to journalArticlepeer-review

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A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.
Original languageEnglish
Pages (from-to)3011-3014
Number of pages4
JournalMicroelectronic Engineering
Issue number9
Early online date3 May 2011
Publication statusPublished - Sept 2011


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