Nanoimprint lithography resist profile inversion for lift-off applications

Philip A Shields; Duncan W E Allsopp

doi:10.1016/j.mee.2011.04.063

Nanoimprint lithography resist profile inversion for lift-off applications

Philip A Shields, Duncan W E Allsopp

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (SciVal)

274 Downloads (Pure)

Abstract

A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.

Original language	English
Pages (from-to)	3011-3014
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	9
Early online date	3 May 2011
DOIs	https://doi.org/10.1016/j.mee.2011.04.063
Publication status	Published - Sept 2011

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10.1016/j.mee.2011.04.063

Shields_MicroelecEng_2011.pdf
NOTICE: this is the author’s version of a work that was accepted for publication in Microelectronic Engineering. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Microelectronic Engineering, Vol 88, Issue 9, 2011, DOI 10.1016/j.mee.2011.04.063
Accepted author manuscript, 3.4 MB

Cite this

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title = "Nanoimprint lithography resist profile inversion for lift-off applications",

abstract = "A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.",

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AU - Shields, Philip A

AU - Allsopp, Duncan W E

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AB - A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.

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Nanoimprint lithography resist profile inversion for lift-off applications

Abstract

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David Bullett Nanofabrication Facility

EVG 620 NanoImprint Lithography

Raith Elphy Plus Electron Beam Lithography

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Nanoimprint lithography resist profile inversion for lift-off applications

Abstract

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Other files and links

Fingerprint

Equipment

David Bullett Nanofabrication Facility

EVG 620 NanoImprint Lithography

Raith Elphy Plus Electron Beam Lithography

Cite this