TY - JOUR
T1 - Nanoimprint lithography resist profile inversion for lift-off applications
AU - Shields, Philip A
AU - Allsopp, Duncan W E
PY - 2011/9
Y1 - 2011/9
N2 - A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.
AB - A method is described in which the tapered features that are inherent to nanoimprint lithography are inverted to allow successful lift-off. A mold of the relief is created by in-filling the imprinted resist with hydrogen silsesquioxane (HSQ) before selectively removing the resist with O2 plasma. Nanoscale etch masks have been created by lift-off from the negative HSQ profile and used to create high-aspect-ratio structures in materials that are hard to plasma etch.
UR - http://www.scopus.com/inward/record.url?scp=80051549079&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1016/j.mee.2011.04.063
U2 - 10.1016/j.mee.2011.04.063
DO - 10.1016/j.mee.2011.04.063
M3 - Article
VL - 88
SP - 3011
EP - 3014
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 9
ER -