Nano-pendeo GaN growth of light emitting devices on silicon

Wang Nang Wang, Chaowang Liu, A Gott, Somyod Denchitcharoen, Philip Shields, L Meshi, S Khongphetsak, I Griffiths, D Cherns, R Campion

Research output: Contribution to journalArticle

  • 1 Citations

Abstract

This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.
LanguageEnglish
Pages187-190
Number of pages4
JournalJournal of Light and Visual Environment
Volume32
Issue number2
DOIs
StatusPublished - 2008

Fingerprint

Sapphire
Silicon
Defects
Stress relaxation
Nitrides
Light emitting diodes
Nanostructures
Substrates

Keywords

  • Sapphire
  • Light emitting diodes
  • Corundum
  • Light sources
  • Gallium alloys
  • Light emission
  • Nitrides
  • Nonmetals
  • Semiconducting gallium
  • Semiconducting silicon compounds
  • Gallium nitride

Cite this

Wang, W. N., Liu, C., Gott, A., Denchitcharoen, S., Shields, P., Meshi, L., ... Campion, R. (2008). Nano-pendeo GaN growth of light emitting devices on silicon. Journal of Light and Visual Environment, 32(2), 187-190. DOI: 10.2150/jlve.32.187

Nano-pendeo GaN growth of light emitting devices on silicon. / Wang, Wang Nang; Liu, Chaowang; Gott, A; Denchitcharoen, Somyod; Shields, Philip; Meshi, L; Khongphetsak, S; Griffiths, I; Cherns, D; Campion, R.

In: Journal of Light and Visual Environment, Vol. 32, No. 2, 2008, p. 187-190.

Research output: Contribution to journalArticle

Wang, WN, Liu, C, Gott, A, Denchitcharoen, S, Shields, P, Meshi, L, Khongphetsak, S, Griffiths, I, Cherns, D & Campion, R 2008, 'Nano-pendeo GaN growth of light emitting devices on silicon' Journal of Light and Visual Environment, vol 32, no. 2, pp. 187-190. DOI: 10.2150/jlve.32.187
Wang WN, Liu C, Gott A, Denchitcharoen S, Shields P, Meshi L et al. Nano-pendeo GaN growth of light emitting devices on silicon. Journal of Light and Visual Environment. 2008;32(2):187-190. Available from, DOI: 10.2150/jlve.32.187
Wang, Wang Nang ; Liu, Chaowang ; Gott, A ; Denchitcharoen, Somyod ; Shields, Philip ; Meshi, L ; Khongphetsak, S ; Griffiths, I ; Cherns, D ; Campion, R. / Nano-pendeo GaN growth of light emitting devices on silicon. In: Journal of Light and Visual Environment. 2008 ; Vol. 32, No. 2. pp. 187-190
@article{ef92bbea12f24664b0b5da6aa5ec1231,
title = "Nano-pendeo GaN growth of light emitting devices on silicon",
abstract = "This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.",
keywords = "Sapphire, Light emitting diodes, Corundum, Light sources, Gallium alloys, Light emission, Nitrides, Nonmetals, Semiconducting gallium, Semiconducting silicon compounds, Gallium nitride",
author = "Wang, {Wang Nang} and Chaowang Liu and A Gott and Somyod Denchitcharoen and Philip Shields and L Meshi and S Khongphetsak and I Griffiths and D Cherns and R Campion",
year = "2008",
doi = "10.2150/jlve.32.187",
language = "English",
volume = "32",
pages = "187--190",
journal = "Journal of Light and Visual Environment",
issn = "0387-8805",
publisher = "The Illuminating Engineering Institute of Japan",
number = "2",

}

TY - JOUR

T1 - Nano-pendeo GaN growth of light emitting devices on silicon

AU - Wang,Wang Nang

AU - Liu,Chaowang

AU - Gott,A

AU - Denchitcharoen,Somyod

AU - Shields,Philip

AU - Meshi,L

AU - Khongphetsak,S

AU - Griffiths,I

AU - Cherns,D

AU - Campion,R

PY - 2008

Y1 - 2008

N2 - This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

AB - This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

KW - Sapphire

KW - Light emitting diodes

KW - Corundum

KW - Light sources

KW - Gallium alloys

KW - Light emission

KW - Nitrides

KW - Nonmetals

KW - Semiconducting gallium

KW - Semiconducting silicon compounds

KW - Gallium nitride

UR - http://www.scopus.com/inward/record.url?scp=58549119401&partnerID=8YFLogxK

UR - http://dx.doi.org/10.2150/jlve.32.187

U2 - 10.2150/jlve.32.187

DO - 10.2150/jlve.32.187

M3 - Article

VL - 32

SP - 187

EP - 190

JO - Journal of Light and Visual Environment

T2 - Journal of Light and Visual Environment

JF - Journal of Light and Visual Environment

SN - 0387-8805

IS - 2

ER -