Nano-pendeo GaN growth of light emitting devices on silicon

Wang Nang Wang, Chaowang Liu, A Gott, Somyod Denchitcharoen, Philip Shields, L Meshi, S Khongphetsak, I Griffiths, D Cherns, R Campion

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Abstract

This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.
Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalJournal of Light and Visual Environment
Volume32
Issue number2
DOIs
Publication statusPublished - 2008

Keywords

  • Sapphire
  • Light emitting diodes
  • Corundum
  • Light sources
  • Gallium alloys
  • Light emission
  • Nitrides
  • Nonmetals
  • Semiconducting gallium
  • Semiconducting silicon compounds
  • Gallium nitride

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  • Cite this

    Wang, W. N., Liu, C., Gott, A., Denchitcharoen, S., Shields, P., Meshi, L., Khongphetsak, S., Griffiths, I., Cherns, D., & Campion, R. (2008). Nano-pendeo GaN growth of light emitting devices on silicon. Journal of Light and Visual Environment, 32(2), 187-190. https://doi.org/10.2150/jlve.32.187