Abstract
A method for forming interconnects in a substrate, the substrate comprising a semiconductor layer on an oxide layer forming a silicon-on-oxide substrate, the method comprising forming a plurality of holes into the substrate to the semiconductor layer, and metalizing the plurality of holes to form the interconnects.
Original language | English |
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Patent number | PCT/SG2007/000247 |
Priority date | 10/08/07 |
Publication status | Published - 16 Apr 2013 |