Nano-interconnects for atomic and molecular scale circuits

Naing Thet (Inventor)

Research output: Patent

Abstract

A method for forming interconnects in a substrate, the substrate comprising a semiconductor layer on an oxide layer forming a silicon-on-oxide substrate, the method comprising forming a plurality of holes into the substrate to the semiconductor layer, and metalizing the plurality of holes to form the interconnects.
Original languageEnglish
Patent numberPCT/SG2007/000247
Priority date10/08/07
Publication statusPublished - 16 Apr 2013

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