Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

Daisy E. Gomersall, Kham M. Niang, James D. Parish, Zhuotong Sun, Andrew L. Johnson, Judith L. MacManus-Driscoll, Andrew J. Flewitt

Research output: Contribution to journalArticlepeer-review

5 Citations (SciVal)

Abstract

This work demonstrates p-type SnO thin film transistors, where the SnO active layers were deposited with atomic layer deposition (ALD) using the Sn(ii) alkoxide precursor, Sn(ii) bis(tert-butoxide). The deposition optimisation explores the use of multiple Sn pulses per ALD cycle and the use of an exposure mode (where the pump extraction is paused before the Sn precursor purge) to increase the residence time and allow for more effective saturation of the surface. The fabricated devices required post deposition annealing of the active layer, with device performance further improved by back-channel passivation using ALD Al2O3. The performance of devices deposited using the varying precursor delivery modes has also been compared, with the devices utilizing deposition with multiple Sn pulses and a post deposition anneal at 250 °C achieving an on/off ratio of ∼4 × 104 and field effect mobility (μFE) of 0.6 cm2 (V s)−1. The growth processes present during deposition with the different precursor delivery modes was investigated using fractal geometry and topographical scaling methods, with the poor device performance for the single Sn pulse deposition attributed to 2D lateral island growth.

Original languageEnglish
Pages (from-to)5740-5749
Number of pages10
JournalJournal of Materials Chemistry C
Volume11
Issue number17
DOIs
Publication statusPublished - 13 Apr 2023

Bibliographical note

Funding Information:
This work is supported by the EPSRC through the Centre for Doctoral Training in Integrated Photonic and Electronic Systems (IPES) under grant no. EP/L015455/1, and through project grants EP/M013650/1 and EP/P027032/1. For the purpose of open access, the author has applied a Creative Commons Attribution (CC BY) licence to any Author Accepted Manuscript version arising from this submission.

Publisher Copyright:
© 2023 The Royal Society of Chemistry

ASJC Scopus subject areas

  • General Chemistry
  • Materials Chemistry

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