Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

Daisy E. Gomersall; Kham M. Niang; James D. Parish; Zhuotong Sun; Andrew L. Johnson; Judith L. MacManus-Driscoll; Andrew J. Flewitt

doi:10.1039/d3tc00255a

Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

Daisy E. Gomersall, Kham M. Niang, James D. Parish, Zhuotong Sun, Andrew L. Johnson, Judith L. MacManus-Driscoll, Andrew J. Flewitt

University of Cambridge

Research output: Contribution to journal › Article › peer-review

9 Citations (SciVal)

Abstract

This work demonstrates p-type SnO thin film transistors, where the SnO active layers were deposited with atomic layer deposition (ALD) using the Sn(ii) alkoxide precursor, Sn(ii) bis(tert-butoxide). The deposition optimisation explores the use of multiple Sn pulses per ALD cycle and the use of an exposure mode (where the pump extraction is paused before the Sn precursor purge) to increase the residence time and allow for more effective saturation of the surface. The fabricated devices required post deposition annealing of the active layer, with device performance further improved by back-channel passivation using ALD Al₂O₃. The performance of devices deposited using the varying precursor delivery modes has also been compared, with the devices utilizing deposition with multiple Sn pulses and a post deposition anneal at 250 °C achieving an on/off ratio of ∼4 × 10⁴ and field effect mobility (μ_FE) of 0.6 cm² (V s)⁻¹. The growth processes present during deposition with the different precursor delivery modes was investigated using fractal geometry and topographical scaling methods, with the poor device performance for the single Sn pulse deposition attributed to 2D lateral island growth.

Original language	English
Pages (from-to)	5740-5749
Number of pages	10
Journal	Journal of Materials Chemistry C
Volume	11
Issue number	17
DOIs	https://doi.org/10.1039/d3tc00255a
Publication status	Published - 13 Apr 2023

Bibliographical note

Funding Information:
This work is supported by the EPSRC through the Centre for Doctoral Training in Integrated Photonic and Electronic Systems (IPES) under grant no. EP/L015455/1, and through project grants EP/M013650/1 and EP/P027032/1. For the purpose of open access, the author has applied a Creative Commons Attribution (CC BY) licence to any Author Accepted Manuscript version arising from this submission.

Publisher Copyright:
© 2023 The Royal Society of Chemistry

Funding

This work is supported by the EPSRC through the Centre for Doctoral Training in Integrated Photonic and Electronic Systems (IPES) under grant no. EP/L015455/1, and through project grants EP/M013650/1 and EP/P027032/1. For the purpose of open access, the author has applied a Creative Commons Attribution (CC BY) licence to any Author Accepted Manuscript version arising from this submission.

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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10.1039/d3tc00255aLicence: CC BY

Cite this

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title = "Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance",

abstract = "This work demonstrates p-type SnO thin film transistors, where the SnO active layers were deposited with atomic layer deposition (ALD) using the Sn(ii) alkoxide precursor, Sn(ii) bis(tert-butoxide). The deposition optimisation explores the use of multiple Sn pulses per ALD cycle and the use of an exposure mode (where the pump extraction is paused before the Sn precursor purge) to increase the residence time and allow for more effective saturation of the surface. The fabricated devices required post deposition annealing of the active layer, with device performance further improved by back-channel passivation using ALD Al2O3. The performance of devices deposited using the varying precursor delivery modes has also been compared, with the devices utilizing deposition with multiple Sn pulses and a post deposition anneal at 250 °C achieving an on/off ratio of ∼4 × 104 and field effect mobility (μFE) of 0.6 cm2 (V s)−1. The growth processes present during deposition with the different precursor delivery modes was investigated using fractal geometry and topographical scaling methods, with the poor device performance for the single Sn pulse deposition attributed to 2D lateral island growth.",

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note = "Funding Information: This work is supported by the EPSRC through the Centre for Doctoral Training in Integrated Photonic and Electronic Systems (IPES) under grant no. EP/L015455/1, and through project grants EP/M013650/1 and EP/P027032/1. For the purpose of open access, the author has applied a Creative Commons Attribution (CC BY) licence to any Author Accepted Manuscript version arising from this submission. Publisher Copyright: {\textcopyright} 2023 The Royal Society of Chemistry",

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AU - Gomersall, Daisy E.

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AU - Flewitt, Andrew J.

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PY - 2023/4/13

Y1 - 2023/4/13

N2 - This work demonstrates p-type SnO thin film transistors, where the SnO active layers were deposited with atomic layer deposition (ALD) using the Sn(ii) alkoxide precursor, Sn(ii) bis(tert-butoxide). The deposition optimisation explores the use of multiple Sn pulses per ALD cycle and the use of an exposure mode (where the pump extraction is paused before the Sn precursor purge) to increase the residence time and allow for more effective saturation of the surface. The fabricated devices required post deposition annealing of the active layer, with device performance further improved by back-channel passivation using ALD Al2O3. The performance of devices deposited using the varying precursor delivery modes has also been compared, with the devices utilizing deposition with multiple Sn pulses and a post deposition anneal at 250 °C achieving an on/off ratio of ∼4 × 104 and field effect mobility (μFE) of 0.6 cm2 (V s)−1. The growth processes present during deposition with the different precursor delivery modes was investigated using fractal geometry and topographical scaling methods, with the poor device performance for the single Sn pulse deposition attributed to 2D lateral island growth.

AB - This work demonstrates p-type SnO thin film transistors, where the SnO active layers were deposited with atomic layer deposition (ALD) using the Sn(ii) alkoxide precursor, Sn(ii) bis(tert-butoxide). The deposition optimisation explores the use of multiple Sn pulses per ALD cycle and the use of an exposure mode (where the pump extraction is paused before the Sn precursor purge) to increase the residence time and allow for more effective saturation of the surface. The fabricated devices required post deposition annealing of the active layer, with device performance further improved by back-channel passivation using ALD Al2O3. The performance of devices deposited using the varying precursor delivery modes has also been compared, with the devices utilizing deposition with multiple Sn pulses and a post deposition anneal at 250 °C achieving an on/off ratio of ∼4 × 104 and field effect mobility (μFE) of 0.6 cm2 (V s)−1. The growth processes present during deposition with the different precursor delivery modes was investigated using fractal geometry and topographical scaling methods, with the poor device performance for the single Sn pulse deposition attributed to 2D lateral island growth.

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Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

Abstract

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