Motion-enhanced magnetic moments of excitons in ZnSe

J J Davies, L C Smith, D Wolverson, A Gust, C Kruse, D Hommel, V P Kochereshko

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Abstract

Recent studies of excitons in wide quantum wells have shown that the magnetic properties are strongly affected as the excitons acquire kinetic energy. In the center of mass approximation, these motion-induced changes are ascribed to mixing between the 1S exciton ground state and the higher lying nP states. The origin of the mixing is due to the dispersion curves for the valence band not being of simple parabolic form. Detailed previous studies of excitons in CdTe have resulted in excellent agreement between experiment and the predictions of this model. One consequence of the mixing is that the magnetic moment of the exciton is not simply the sum of the magnetic moments of the electron and hole, but contains motion-induced contributions, which can easily dominate the contributions from the individual charge carriers. To confirm the validity of the model, we have carried out detailed investigations of the magnetic properties of center of mass excitons in a second semiconductor, ZnSe, for which the magneto-optical properties of the individual charge carriers are completely different from those of CdTe. Excellent agreement is obtained between theory and experiment with a choice of the Luttinger parameter gamma(3)=0.98, in close agreement with the value determined independently by two-photon magnetoabsorption experiments. The success of the model when applied to both materials provides strong evidence that motion-induced changes in magnetism are a universal feature in zinc-blende semiconductors.
Original languageEnglish
Article number085208
JournalPhysical Review B
Volume81
Issue number8
DOIs
Publication statusPublished - 2010

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Magnetic moments
Excitons
magnetic moments
excitons
Charge carriers
center of mass
charge carriers
Magnetic properties
Semiconductor materials
magnetic properties
Experiments
Magnetism
Valence bands
Kinetic energy
Ground state
Semiconductor quantum wells
LDS 751
Zinc
Photons
Optical properties

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Davies, J. J., Smith, L. C., Wolverson, D., Gust, A., Kruse, C., Hommel, D., & Kochereshko, V. P. (2010). Motion-enhanced magnetic moments of excitons in ZnSe. Physical Review B, 81(8), [085208]. https://doi.org/10.1103/PhysRevB.81.085208

Motion-enhanced magnetic moments of excitons in ZnSe. / Davies, J J; Smith, L C; Wolverson, D; Gust, A; Kruse, C; Hommel, D; Kochereshko, V P.

In: Physical Review B, Vol. 81, No. 8, 085208, 2010.

Research output: Contribution to journalArticle

Davies, JJ, Smith, LC, Wolverson, D, Gust, A, Kruse, C, Hommel, D & Kochereshko, VP 2010, 'Motion-enhanced magnetic moments of excitons in ZnSe', Physical Review B, vol. 81, no. 8, 085208. https://doi.org/10.1103/PhysRevB.81.085208
Davies, J J ; Smith, L C ; Wolverson, D ; Gust, A ; Kruse, C ; Hommel, D ; Kochereshko, V P. / Motion-enhanced magnetic moments of excitons in ZnSe. In: Physical Review B. 2010 ; Vol. 81, No. 8.
@article{18e7fdde36e24cbc8d2d71df3c8217f8,
title = "Motion-enhanced magnetic moments of excitons in ZnSe",
abstract = "Recent studies of excitons in wide quantum wells have shown that the magnetic properties are strongly affected as the excitons acquire kinetic energy. In the center of mass approximation, these motion-induced changes are ascribed to mixing between the 1S exciton ground state and the higher lying nP states. The origin of the mixing is due to the dispersion curves for the valence band not being of simple parabolic form. Detailed previous studies of excitons in CdTe have resulted in excellent agreement between experiment and the predictions of this model. One consequence of the mixing is that the magnetic moment of the exciton is not simply the sum of the magnetic moments of the electron and hole, but contains motion-induced contributions, which can easily dominate the contributions from the individual charge carriers. To confirm the validity of the model, we have carried out detailed investigations of the magnetic properties of center of mass excitons in a second semiconductor, ZnSe, for which the magneto-optical properties of the individual charge carriers are completely different from those of CdTe. Excellent agreement is obtained between theory and experiment with a choice of the Luttinger parameter gamma(3)=0.98, in close agreement with the value determined independently by two-photon magnetoabsorption experiments. The success of the model when applied to both materials provides strong evidence that motion-induced changes in magnetism are a universal feature in zinc-blende semiconductors.",
author = "Davies, {J J} and Smith, {L C} and D Wolverson and A Gust and C Kruse and D Hommel and Kochereshko, {V P}",
year = "2010",
doi = "10.1103/PhysRevB.81.085208",
language = "English",
volume = "81",
journal = "Physical Review B : Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Physical Society",
number = "8",

}

TY - JOUR

T1 - Motion-enhanced magnetic moments of excitons in ZnSe

AU - Davies, J J

AU - Smith, L C

AU - Wolverson, D

AU - Gust, A

AU - Kruse, C

AU - Hommel, D

AU - Kochereshko, V P

PY - 2010

Y1 - 2010

N2 - Recent studies of excitons in wide quantum wells have shown that the magnetic properties are strongly affected as the excitons acquire kinetic energy. In the center of mass approximation, these motion-induced changes are ascribed to mixing between the 1S exciton ground state and the higher lying nP states. The origin of the mixing is due to the dispersion curves for the valence band not being of simple parabolic form. Detailed previous studies of excitons in CdTe have resulted in excellent agreement between experiment and the predictions of this model. One consequence of the mixing is that the magnetic moment of the exciton is not simply the sum of the magnetic moments of the electron and hole, but contains motion-induced contributions, which can easily dominate the contributions from the individual charge carriers. To confirm the validity of the model, we have carried out detailed investigations of the magnetic properties of center of mass excitons in a second semiconductor, ZnSe, for which the magneto-optical properties of the individual charge carriers are completely different from those of CdTe. Excellent agreement is obtained between theory and experiment with a choice of the Luttinger parameter gamma(3)=0.98, in close agreement with the value determined independently by two-photon magnetoabsorption experiments. The success of the model when applied to both materials provides strong evidence that motion-induced changes in magnetism are a universal feature in zinc-blende semiconductors.

AB - Recent studies of excitons in wide quantum wells have shown that the magnetic properties are strongly affected as the excitons acquire kinetic energy. In the center of mass approximation, these motion-induced changes are ascribed to mixing between the 1S exciton ground state and the higher lying nP states. The origin of the mixing is due to the dispersion curves for the valence band not being of simple parabolic form. Detailed previous studies of excitons in CdTe have resulted in excellent agreement between experiment and the predictions of this model. One consequence of the mixing is that the magnetic moment of the exciton is not simply the sum of the magnetic moments of the electron and hole, but contains motion-induced contributions, which can easily dominate the contributions from the individual charge carriers. To confirm the validity of the model, we have carried out detailed investigations of the magnetic properties of center of mass excitons in a second semiconductor, ZnSe, for which the magneto-optical properties of the individual charge carriers are completely different from those of CdTe. Excellent agreement is obtained between theory and experiment with a choice of the Luttinger parameter gamma(3)=0.98, in close agreement with the value determined independently by two-photon magnetoabsorption experiments. The success of the model when applied to both materials provides strong evidence that motion-induced changes in magnetism are a universal feature in zinc-blende semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=77954883509&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1103/PhysRevB.81.085208

U2 - 10.1103/PhysRevB.81.085208

DO - 10.1103/PhysRevB.81.085208

M3 - Article

VL - 81

JO - Physical Review B : Condensed Matter and Materials Physics

JF - Physical Review B : Condensed Matter and Materials Physics

SN - 1098-0121

IS - 8

M1 - 085208

ER -