Mosaic structure and optical properties of III-nitrides

N. M. Shmidt; G. Aliev; A. N. Besyul'kin; J. Davies; M. S. Dunaevsky; A. G. Kolmakov; A. V. Loskutov; W. V. Lundin; A. V. Sakharov; A. S. Usikov; D. Wolverson; E. E. Zavarin

doi:10.1002/pssc.200390113

Mosaic structure and optical properties of III-nitrides

N. M. Shmidt, G. Aliev, A. N. Besyul'kin, J. Davies, M. S. Dunaevsky, A. G. Kolmakov, A. V. Loskutov, W. V. Lundin, A. V. Sakharov, A. S. Usikov, D. Wolverson, E. E. Zavarin

Research output: Contribution to journal › Conference article › peer-review

3 Citations (SciVal)

Abstract

An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band-edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light-emitting structures and the PL spectra of GaN epilayers with different degree of order of the mosaic structure has been found. Possibilities of using the new approach based on the multifractal parameterisation to analyse mosaic structure properties is shown.

Original language	English
Pages (from-to)	558-562
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Volume	0
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390113
Publication status	Published - 1 Dec 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200390113

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title = "Mosaic structure and optical properties of III-nitrides",

abstract = "An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band-edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light-emitting structures and the PL spectra of GaN epilayers with different degree of order of the mosaic structure has been found. Possibilities of using the new approach based on the multifractal parameterisation to analyse mosaic structure properties is shown.",

author = "Shmidt, {N. M.} and G. Aliev and Besyul'kin, {A. N.} and J. Davies and Dunaevsky, {M. S.} and Kolmakov, {A. G.} and Loskutov, {A. V.} and Lundin, {W. V.} and Sakharov, {A. V.} and Usikov, {A. S.} and D. Wolverson and Zavarin, {E. E.}",

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doi = "10.1002/pssc.200390113",

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journal = "Physica Status Solidi C: Conferences",

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note = "2nd International Workshop on Nitride Semiconductors, IWN 2002 ; Conference date: 22-07-2002 Through 25-07-2002",

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TY - JOUR

T1 - Mosaic structure and optical properties of III-nitrides

AU - Shmidt, N. M.

AU - Aliev, G.

AU - Besyul'kin, A. N.

AU - Davies, J.

AU - Dunaevsky, M. S.

AU - Kolmakov, A. G.

AU - Loskutov, A. V.

AU - Lundin, W. V.

AU - Sakharov, A. V.

AU - Usikov, A. S.

AU - Wolverson, D.

AU - Zavarin, E. E.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band-edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light-emitting structures and the PL spectra of GaN epilayers with different degree of order of the mosaic structure has been found. Possibilities of using the new approach based on the multifractal parameterisation to analyse mosaic structure properties is shown.

AB - An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band-edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light-emitting structures and the PL spectra of GaN epilayers with different degree of order of the mosaic structure has been found. Possibilities of using the new approach based on the multifractal parameterisation to analyse mosaic structure properties is shown.

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U2 - 10.1002/pssc.200390113

DO - 10.1002/pssc.200390113

M3 - Conference article

AN - SCOPUS:79955001848

SN - 1610-1634

VL - 0

SP - 558

EP - 562

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Mosaic structure and optical properties of III-nitrides

Abstract

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