Mosaic structure and optical properties of III-nitrides

N. M. Shmidt, G. Aliev, A. N. Besyul'kin, J. Davies, M. S. Dunaevsky, A. G. Kolmakov, A. V. Loskutov, W. V. Lundin, A. V. Sakharov, A. S. Usikov, D. Wolverson, E. E. Zavarin

Research output: Contribution to journalConference articlepeer-review

3 Citations (SciVal)


An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band-edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light-emitting structures and the PL spectra of GaN epilayers with different degree of order of the mosaic structure has been found. Possibilities of using the new approach based on the multifractal parameterisation to analyse mosaic structure properties is shown.

Original languageEnglish
Pages (from-to)558-562
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number1
Publication statusPublished - 1 Dec 2002
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 22 Jul 200225 Jul 2002

ASJC Scopus subject areas

  • Condensed Matter Physics


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