An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band-edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light-emitting structures and the PL spectra of GaN epilayers with different degree of order of the mosaic structure has been found. Possibilities of using the new approach based on the multifractal parameterisation to analyse mosaic structure properties is shown.
|Number of pages||5|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 1 Dec 2002|
|Event||2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany|
Duration: 22 Jul 2002 → 25 Jul 2002
ASJC Scopus subject areas
- Condensed Matter Physics