Morphology of porous silicon layers deduced from polarization memory experiments

J Diener; D Kovalev; G Polisski; N Kunzner; F Koch

Morphology of porous silicon layers deduced from polarization memory experiments

J Diener, D Kovalev, G Polisski, N Kunzner, F Koch

Department of Physics

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6 Citations (SciVal)

Abstract

The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.

Original language	English
Pages (from-to)	297-300
Number of pages	4
Journal	Physica Status Solidi B-Basic Solid State Physics
Volume	224
Issue number	1
Publication status	Published - 2001

Bibliographical note

ID number: ISI:000167827200059

Cite this

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title = "Morphology of porous silicon layers deduced from polarization memory experiments",

abstract = "The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.",

author = "J Diener and D Kovalev and G Polisski and N Kunzner and F Koch",

note = "ID number: ISI:000167827200059",

year = "2001",

language = "English",

volume = "224",

pages = "297--300",

journal = "Physica Status Solidi B-Basic Solid State Physics",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "1",

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TY - JOUR

T1 - Morphology of porous silicon layers deduced from polarization memory experiments

AU - Diener, J

AU - Kovalev, D

AU - Polisski, G

AU - Kunzner, N

AU - Koch, F

N1 - ID number: ISI:000167827200059

PY - 2001

Y1 - 2001

N2 - The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.

AB - The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.

UR - https://www.scopus.com/pages/publications/0035582014

M3 - Article

SN - 0370-1972

VL - 224

SP - 297

EP - 300

JO - Physica Status Solidi B-Basic Solid State Physics

JF - Physica Status Solidi B-Basic Solid State Physics

IS - 1

ER -

Morphology of porous silicon layers deduced from polarization memory experiments

Abstract

Bibliographical note

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