Abstract
The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.
| Original language | English |
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| Pages (from-to) | 297-300 |
| Number of pages | 4 |
| Journal | Physica Status Solidi B-Basic Solid State Physics |
| Volume | 224 |
| Issue number | 1 |
| Publication status | Published - 2001 |