Morphology of porous silicon layers deduced from polarization memory experiments

J Diener, D Kovalev, G Polisski, N Kunzner, F Koch

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6 Citations (SciVal)


The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.
Original languageEnglish
Pages (from-to)297-300
Number of pages4
JournalPhysica Status Solidi B-Basic Solid State Physics
Issue number1
Publication statusPublished - 2001

Bibliographical note

ID number: ISI:000167827200059


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