Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

B. C. Qiu; M. L. Ke; O. P. Kowalski; A. C. Bryce; J. S. Aitchison; J. H. Marsh; M. Owen; I. H. White; R. V. Penty

Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

B. C. Qiu
, M. L. Ke
, O. P. Kowalski
, A. C. Bryce
, J. S. Aitchison
, J. H. Marsh
, M. Owen
, I. H. White
, R. V. Penty

University of Glasgow

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO₂ for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.

Original language	English
Pages (from-to)	415-418
Number of pages	4
Journal	International Conference on Indium Phosphide and Related Materials
Publication status	Published - 3 Dec 2000
Event	2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA Duration: 14 May 2000 → 18 May 2000

ASJC Scopus subject areas

General Physics and Astronomy
General Materials Science

Cite this

@article{6bc8fb7b1dfa4211af3797c38c8fbc08,

title = "Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing",

abstract = "We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO2 for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.",

author = "Qiu, \{B. C.\} and Ke, \{M. L.\} and Kowalski, \{O. P.\} and Bryce, \{A. C.\} and Aitchison, \{J. S.\} and Marsh, \{J. H.\} and M. Owen and White, \{I. H.\} and Penty, \{R. V.\}",

year = "2000",

month = dec,

day = "3",

language = "English",

pages = "415--418",

journal = "International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "IEEE",

note = "2000 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2000 Through 18-05-2000",

}

TY - JOUR

T1 - Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

AU - Qiu, B. C.

AU - Ke, M. L.

AU - Kowalski, O. P.

AU - Bryce, A. C.

AU - Aitchison, J. S.

AU - Marsh, J. H.

AU - Owen, M.

AU - White, I. H.

AU - Penty, R. V.

PY - 2000/12/3

Y1 - 2000/12/3

N2 - We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO2 for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.

AB - We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO2 for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.

UR - https://www.scopus.com/pages/publications/0033723815

M3 - Conference article

AN - SCOPUS:0033723815

SN - 1092-8669

SP - 415

EP - 418

JO - International Conference on Indium Phosphide and Related Materials

JF - International Conference on Indium Phosphide and Related Materials

T2 - 2000 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2000 through 18 May 2000

ER -

Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

Abstract

ASJC Scopus subject areas

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