Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

B. C. Qiu; M. L. Ke; O. P. Kowalski; A. C. Bryce; J. S. Aitchison; J. H. Marsh; M. Owen; I. H. White; R. V. Penty

Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

B. C. Qiu, M. L. Ke, O. P. Kowalski, A. C. Bryce, J. S. Aitchison, J. H. Marsh, M. Owen, I. H. White, R. V. Penty

University of Glasgow

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO₂ for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.

Original language	English
Pages (from-to)	415-418
Number of pages	4
Journal	International Conference on Indium Phosphide and Related Materials
Publication status	Published - 3 Dec 2000
Event	2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA Duration: 14 May 2000 → 18 May 2000

ASJC Scopus subject areas

General Physics and Astronomy
General Materials Science

Cite this

@article{6bc8fb7b1dfa4211af3797c38c8fbc08,

title = "Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing",

abstract = "We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO2 for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.",

author = "Qiu, {B. C.} and Ke, {M. L.} and Kowalski, {O. P.} and Bryce, {A. C.} and Aitchison, {J. S.} and Marsh, {J. H.} and M. Owen and White, {I. H.} and Penty, {R. V.}",

year = "2000",

month = dec,

day = "3",

language = "English",

pages = "415--418",

journal = "International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "IEEE",

note = "2000 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2000 Through 18-05-2000",

}

TY - JOUR

T1 - Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

AU - Qiu, B. C.

AU - Ke, M. L.

AU - Kowalski, O. P.

AU - Bryce, A. C.

AU - Aitchison, J. S.

AU - Marsh, J. H.

AU - Owen, M.

AU - White, I. H.

AU - Penty, R. V.

PY - 2000/12/3

Y1 - 2000/12/3

N2 - We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO2 for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.

AB - We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO2 for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.

UR - http://www.scopus.com/inward/record.url?scp=0033723815&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033723815

SN - 1092-8669

SP - 415

EP - 418

JO - International Conference on Indium Phosphide and Related Materials

JF - International Conference on Indium Phosphide and Related Materials

T2 - 2000 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2000 through 18 May 2000

ER -

Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

Abstract

ASJC Scopus subject areas

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