Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing

B. C. Qiu, M. L. Ke, O. P. Kowalski, A. C. Bryce, J. S. Aitchison, J. H. Marsh, M. Owen, I. H. White, R. V. Penty

Research output: Contribution to journalConference articlepeer-review

Abstract

We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO2 for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB.

Original languageEnglish
Pages (from-to)415-418
Number of pages4
JournalInternational Conference on Indium Phosphide and Related Materials
Publication statusPublished - 3 Dec 2000
Event2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA
Duration: 14 May 200018 May 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

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