Modulational instability in a silicon-on-insulator directional coupler: Role of the coupling-induced group velocity dispersion

Wei Ding, Owain K Staines, Gareth D Hobbs, Andriy V Gorbach, Charles De Nobriga, William J Wadsworth, Jonathan C Knight, Dmitry V Skryabin, M J Strain, M Sorel, R M De La Rue

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Abstract

We report frequency conversion experiments in silicon-on-insulator (SOI) directional couplers. We demonstrate that the evanescent coupling between two subwavelength SOI waveguides is strongly dispersive and significantly modifies modulational instability (MI) spectra through the coupling induced group velocity dispersion (GVD). As the separation between two 380-nm-wide silicon photonic wires decreases, the increasing dispersion of the coupling makes the GVD in the symmetric supermode more normal and suppresses the bandwidth of the MI gain observed for larger separations.
LanguageEnglish
Pages668-670
Number of pages3
JournalOptics Letters
Volume37
Issue number4
DOIs
StatusPublished - 15 Feb 2012

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directional couplers
group velocity
insulators
silicon
frequency converters
wire
photonics
waveguides
bandwidth

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Modulational instability in a silicon-on-insulator directional coupler: Role of the coupling-induced group velocity dispersion. / Ding, Wei; Staines, Owain K; Hobbs, Gareth D; Gorbach, Andriy V; De Nobriga, Charles; Wadsworth, William J; Knight, Jonathan C; Skryabin, Dmitry V; Strain, M J; Sorel, M; De La Rue, R M.

In: Optics Letters, Vol. 37, No. 4, 15.02.2012, p. 668-670.

Research output: Contribution to journalArticle

Ding, Wei ; Staines, Owain K ; Hobbs, Gareth D ; Gorbach, Andriy V ; De Nobriga, Charles ; Wadsworth, William J ; Knight, Jonathan C ; Skryabin, Dmitry V ; Strain, M J ; Sorel, M ; De La Rue, R M. / Modulational instability in a silicon-on-insulator directional coupler: Role of the coupling-induced group velocity dispersion. In: Optics Letters. 2012 ; Vol. 37, No. 4. pp. 668-670
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AU - Wadsworth,William J

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