Modification of silicon waveguide structures using ion implantation induced defects

A Knights, K Dudeck, W Walters, Paul Coleman

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The structure of re-crystallized silicon films is investigated using transmission electron microscopy, spectroscopic ellipsometry and positron annihilation spectroscopy. Samples were prepared via amorphization of the silicon overlayer of silicon-on-insulator substrates, and subsequent thermal annealing. For an annealing temperature of 650 °C we show that the silicon film has a poly-crystalline structure. Its refractive index measured at 1550 nm is comparable to that of crystalline silicon following re-crystallization at 750 °C. Positron measurements indicate a high concentration of open-volume point defects in the re-crystallized films. We discuss the potential importance of these structures with regard to defect engineering for silicon photonic devices.
Original languageEnglish
Pages (from-to)75-77
Number of pages3
JournalApplied Surface Science
Volume255
Issue number1
DOIs
Publication statusPublished - Oct 2008

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