TY - JOUR
T1 - Modification of silicon waveguide structures using ion implantation induced defects
AU - Knights, A
AU - Dudeck, K
AU - Walters, W
AU - Coleman, Paul
PY - 2008/10
Y1 - 2008/10
N2 - The structure of re-crystallized silicon films is investigated using transmission electron microscopy, spectroscopic ellipsometry and positron annihilation spectroscopy. Samples were prepared via amorphization of the silicon overlayer of silicon-on-insulator substrates, and subsequent thermal annealing. For an annealing temperature of 650 °C we show that the silicon film has a poly-crystalline structure. Its refractive index measured at 1550 nm is comparable to that of crystalline silicon following re-crystallization at 750 °C. Positron measurements indicate a high concentration of open-volume point defects in the re-crystallized films. We discuss the potential importance of these structures with regard to defect engineering for silicon photonic devices.
AB - The structure of re-crystallized silicon films is investigated using transmission electron microscopy, spectroscopic ellipsometry and positron annihilation spectroscopy. Samples were prepared via amorphization of the silicon overlayer of silicon-on-insulator substrates, and subsequent thermal annealing. For an annealing temperature of 650 °C we show that the silicon film has a poly-crystalline structure. Its refractive index measured at 1550 nm is comparable to that of crystalline silicon following re-crystallization at 750 °C. Positron measurements indicate a high concentration of open-volume point defects in the re-crystallized films. We discuss the potential importance of these structures with regard to defect engineering for silicon photonic devices.
UR - http://www.scopus.com/inward/record.url?scp=53049098004&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1016/j.apsusc.2008.05.167
U2 - 10.1016/j.apsusc.2008.05.167
DO - 10.1016/j.apsusc.2008.05.167
M3 - Article
VL - 255
SP - 75
EP - 77
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1
ER -