Modelling wafer bow in silicon-polycrystalline CVD diamond substrates for GaN-based devices

Michael J Edwards, Christopher R Bowen, Duncan W E Allsopp, Andrew C E Dent

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Composite silicon-polycrystalline chemical vapour deposition (CVD) diamond wafers are potential substrates for GaN-based devices for use in harsh environments due to their high thermal conductivity and chemical stability. When cooled from a typical diamond deposition temperature of approximately 800 to 25 degrees C wafer bowing arises from a mismatch in the coefficients of thermal expansion of silicon and polycrystalline diamond. In this paper 100 mm diameter silicon-polycrystalline diamond wafers have been modelled using ANSYS finite element software to investigate their bowing behaviour as a function of temperature and geometry. The maximum bow of a wafer occurred where the thicknesses of both the silicon and polycrystalline diamond layers was almost identical; this has been confirmed using analytical methods. Strategies are discussed for reducing wafer bow.
Original languageEnglish
Article number385502
JournalJournal of Physics D: Applied Physics
Volume43
Issue number38
DOIs
Publication statusPublished - 29 Sep 2010

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Diamond
bows
Polysilicon
Chemical vapor deposition
Diamonds
diamonds
vapor deposition
wafers
silicon
Substrates
Bending (forming)
Silicon
Chemical stability
Thermal expansion
thermal expansion
Thermal conductivity
thermal conductivity
computer programs
Temperature
composite materials

Cite this

Modelling wafer bow in silicon-polycrystalline CVD diamond substrates for GaN-based devices. / Edwards, Michael J; Bowen, Christopher R; Allsopp, Duncan W E; Dent, Andrew C E.

In: Journal of Physics D: Applied Physics, Vol. 43, No. 38, 385502, 29.09.2010.

Research output: Contribution to journalArticle

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