Modelling Intersubband Electroabsorption Modulation

K M Wong, D W E Allsopp

Research output: Contribution to conferencePaper

24 Citations (Scopus)

Abstract

This paper describes a study of the scope for using intersubband transitions as a basis for electroabsorption modulation of 1550 nm wavelength light. Intersubband absorption (ISBA) in the 1550 nm wavelength range in deep modulation doped In0.53Ga0.47As/AlAs quantum wells (QWs) is shown to be sufficiently strong to achieve an acceptable modulation depth of the optical carrier in a long waveguide device. The absorption strength decreases rapidly and almost linearly with increasing applied field strength, desirable attributes for a waveguide electroabsorption modulator.
Original languageEnglish
Pages1-1
Number of pages1
Publication statusPublished - 2007
EventConference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2007) - Baltimore, MD, USA United States
Duration: 6 May 200711 May 2007

Conference

ConferenceConference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2007)
CountryUSA United States
CityBaltimore, MD
Period6/05/0711/05/07

Keywords

  • aluminium compounds
  • electroabsorption
  • III-V semiconductors
  • optical waveguides
  • electro-optical modulation
  • gallium arsenide
  • quantum well devices
  • indium compounds

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