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Abstract
This paper describes a study of the scope for using intersubband transitions as a basis for electroabsorption modulation of 1550 nm wavelength light. Intersubband absorption (ISBA) in the 1550 nm wavelength range in deep modulation doped In0.53Ga0.47As/AlAs quantum wells (QWs) is shown to be sufficiently strong to achieve an acceptable modulation depth of the optical carrier in a long waveguide device. The absorption strength decreases rapidly and almost linearly with increasing applied field strength, desirable attributes for a waveguide electroabsorption modulator.
| Original language | English |
|---|---|
| Pages | 1-1 |
| Number of pages | 1 |
| Publication status | Published - 2007 |
| Event | Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2007) - Baltimore, MD, USA United States Duration: 6 May 2007 → 11 May 2007 |
Conference
| Conference | Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2007) |
|---|---|
| Country/Territory | USA United States |
| City | Baltimore, MD |
| Period | 6/05/07 → 11/05/07 |
Keywords
- aluminium compounds
- electroabsorption
- III-V semiconductors
- optical waveguides
- electro-optical modulation
- gallium arsenide
- quantum well devices
- indium compounds
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Dive into the research topics of 'Modelling Intersubband Electroabsorption Modulation'. Together they form a unique fingerprint.Projects
- 1 Finished
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PORTABLE TERAHERTZ SYSTEMS BASED ON ADVANCE INP TECHNOLOGY - PORTRAIT
Allsopp, D. (PI)
Engineering and Physical Sciences Research Council
1/05/06 → 31/10/09
Project: Research council