Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Michael J Edwards; S Vittoz; R Amen; L Rufer; P Johander; Christopher R Bowen; Duncan W E Allsopp

doi:10.1109/ASDAM.2010.5666320

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Michael J Edwards, S Vittoz, R Amen, L Rufer, P Johander, Christopher R Bowen, Duncan W E Allsopp

Research output: Chapter or section in a book/report/conference proceeding › Book chapter

3 Citations (SciVal)

Abstract

GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C

Original language	English
Title of host publication	Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	127-130
Number of pages	4
DOIs	https://doi.org/10.1109/ASDAM.2010.5666320
Publication status	Published - Oct 2010
Event	18th International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia Duration: 25 Oct 2010 → 27 Oct 2010

Conference

Conference	18th International Conference on Advanced Semiconductor Devices and Microsystems
Abbreviated title	ASDAM 2010
Country/Territory	Slovakia
City	Smolenice
Period	25/10/10 → 27/10/10

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10.1109/ASDAM.2010.5666320

Cite this

Edwards, M. J., Vittoz, S., Amen, R., Rufer, L., Johander, P., Bowen, C. R., & Allsopp, D. W. E. (2010). Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. In Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 (pp. 127-130). IEEE. https://doi.org/10.1109/ASDAM.2010.5666320

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. / Edwards, Michael J; Vittoz, S; Amen, R et al.
Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ: IEEE, 2010. p. 127-130.

Research output: Chapter or section in a book/report/conference proceeding › Book chapter

Edwards, MJ, Vittoz, S, Amen, R, Rufer, L, Johander, P, Bowen, CR & Allsopp, DWE 2010, Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. in Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. IEEE, Piscataway, NJ, pp. 127-130, 18th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 25/10/10. https://doi.org/10.1109/ASDAM.2010.5666320

Edwards MJ, Vittoz S, Amen R, Rufer L, Johander P, Bowen CR et al. Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. In Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ: IEEE. 2010. p. 127-130 doi: 10.1109/ASDAM.2010.5666320

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abstract = "GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C",

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AU - Edwards, Michael J

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AU - Bowen, Christopher R

AU - Allsopp, Duncan W E

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N2 - GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C

AB - GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C

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Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

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