Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Michael J Edwards, S Vittoz, R Amen, L Rufer, P Johander, Christopher R Bowen, Duncan W E Allsopp

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C
Original languageEnglish
Title of host publicationConference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages127-130
Number of pages4
DOIs
Publication statusPublished - Oct 2010
Event18th International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia
Duration: 25 Oct 201027 Oct 2010

Conference

Conference18th International Conference on Advanced Semiconductor Devices and Microsystems
Abbreviated titleASDAM 2010
CountrySlovakia
CitySmolenice
Period25/10/1027/10/10

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