Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Michael J Edwards, S Vittoz, R Amen, L Rufer, P Johander, Christopher R Bowen, Duncan W E Allsopp

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C
Original languageEnglish
Title of host publicationConference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages127-130
Number of pages4
DOIs
Publication statusPublished - Oct 2010
Event18th International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia
Duration: 25 Oct 201027 Oct 2010

Conference

Conference18th International Conference on Advanced Semiconductor Devices and Microsystems
Abbreviated titleASDAM 2010
CountrySlovakia
CitySmolenice
Period25/10/1027/10/10

Fingerprint

Diaphragms
Sapphire
Sensors
High electron mobility transistors
Pressure sensors
Alumina
Glass
Mechanical properties

Cite this

Edwards, M. J., Vittoz, S., Amen, R., Rufer, L., Johander, P., Bowen, C. R., & Allsopp, D. W. E. (2010). Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. In Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 (pp. 127-130). Piscataway, NJ: IEEE. https://doi.org/10.1109/ASDAM.2010.5666320

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. / Edwards, Michael J; Vittoz, S; Amen, R; Rufer, L; Johander, P; Bowen, Christopher R; Allsopp, Duncan W E.

Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ : IEEE, 2010. p. 127-130.

Research output: Chapter in Book/Report/Conference proceedingChapter

Edwards, MJ, Vittoz, S, Amen, R, Rufer, L, Johander, P, Bowen, CR & Allsopp, DWE 2010, Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. in Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. IEEE, Piscataway, NJ, pp. 127-130, 18th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 25/10/10. https://doi.org/10.1109/ASDAM.2010.5666320
Edwards MJ, Vittoz S, Amen R, Rufer L, Johander P, Bowen CR et al. Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. In Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ: IEEE. 2010. p. 127-130 https://doi.org/10.1109/ASDAM.2010.5666320
Edwards, Michael J ; Vittoz, S ; Amen, R ; Rufer, L ; Johander, P ; Bowen, Christopher R ; Allsopp, Duncan W E. / Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ : IEEE, 2010. pp. 127-130
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