Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Michael J Edwards; S Vittoz; R Amen; L Rufer; P Johander; Christopher R Bowen; Duncan W E Allsopp

doi:10.1109/ASDAM.2010.5666320

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Michael J Edwards, S Vittoz, R Amen, L Rufer, P Johander, Christopher R Bowen, Duncan W E Allsopp

Research output: Chapter or section in a book/report/conference proceeding › Chapter or section

3 Citations (SciVal)

Abstract

GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C

Original language	English
Title of host publication	Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	127-130
Number of pages	4
DOIs	https://doi.org/10.1109/ASDAM.2010.5666320
Publication status	Published - Oct 2010
Event	18th International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia Duration: 25 Oct 2010 → 27 Oct 2010

Conference

Conference	18th International Conference on Advanced Semiconductor Devices and Microsystems
Abbreviated title	ASDAM 2010
Country/Territory	Slovakia
City	Smolenice
Period	25/10/10 → 27/10/10

Access to Document

10.1109/ASDAM.2010.5666320

Cite this

Edwards, M. J., Vittoz, S., Amen, R., Rufer, L., Johander, P., Bowen, C. R., & Allsopp, D. W. E. (2010). Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. In Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 (pp. 127-130). IEEE. https://doi.org/10.1109/ASDAM.2010.5666320

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. / Edwards, Michael J; Vittoz, S; Amen, R et al.

Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ : IEEE, 2010. p. 127-130.

Research output: Chapter or section in a book/report/conference proceeding › Chapter or section

Edwards, MJ, Vittoz, S, Amen, R, Rufer, L, Johander, P, Bowen, CR & Allsopp, DWE 2010, Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. in Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. IEEE, Piscataway, NJ, pp. 127-130, 18th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 25/10/10. https://doi.org/10.1109/ASDAM.2010.5666320

Edwards MJ, Vittoz S, Amen R, Rufer L, Johander P, Bowen CR et al. Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments. In Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. Piscataway, NJ: IEEE. 2010. p. 127-130 doi: 10.1109/ASDAM.2010.5666320

@inbook{140e7daa02f241c3a53b4db3684f482b,

title = "Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments",

abstract = "GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C",

author = "Edwards, {Michael J} and S Vittoz and R Amen and L Rufer and P Johander and Bowen, {Christopher R} and Allsopp, {Duncan W E}",

year = "2010",

month = oct,

doi = "10.1109/ASDAM.2010.5666320",

language = "English",

pages = "127--130",

booktitle = "Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010",

publisher = "IEEE",

address = "USA United States",

note = "18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 ; Conference date: 25-10-2010 Through 27-10-2010",

}

TY - CHAP

T1 - Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

AU - Edwards, Michael J

AU - Vittoz, S

AU - Amen, R

AU - Rufer, L

AU - Johander, P

AU - Bowen, Christopher R

AU - Allsopp, Duncan W E

PY - 2010/10

Y1 - 2010/10

N2 - GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C

AB - GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C

UR - http://dx.doi.org/10.1109/ASDAM.2010.5666320

U2 - 10.1109/ASDAM.2010.5666320

DO - 10.1109/ASDAM.2010.5666320

M3 - Chapter or section

SP - 127

EP - 130

BT - Conference Proceedings - The 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010

PB - IEEE

CY - Piscataway, NJ

T2 - 18th International Conference on Advanced Semiconductor Devices and Microsystems

Y2 - 25 October 2010 through 27 October 2010

ER -

Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this