Modeling and parameter extraction technique from the ramp-voltage stressed I–V characteristics of thermally grown SiO2

G Slavcheva

Research output: Contribution to journalArticle

LanguageEnglish
Pages837-844
JournalSolid State Electronics
Volume33
Issue number7
DOIs
StatusPublished - Jul 1990

Cite this

Modeling and parameter extraction technique from the ramp-voltage stressed I–V characteristics of thermally grown SiO2. / Slavcheva, G.

In: Solid State Electronics, Vol. 33, No. 7, 07.1990, p. 837-844.

Research output: Contribution to journalArticle

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