Modeling and parameter extraction technique from the ramp-voltage stressed I–V characteristics of thermally grown SiO2

Modeling and parameter extraction technique from the ramp-voltage stressed I–V characteristics of thermally grown SiO₂

G Slavcheva

Research output: Contribution to journal › Article › peer-review

@article{c8c40bd99c5e4c7393aed9ad1b0bab09,

title = "Modeling and parameter extraction technique from the ramp-voltage stressed I–V characteristics of thermally grown SiO2",

author = "G Slavcheva",

year = "1990",

month = jul,

doi = "10.1016/0038-1101(90)90063-K",

language = "English",

volume = "33",

pages = "837--844",

journal = "Solid State Electronics",

publisher = "Elsevier",

number = "7",

}

TY - JOUR

T1 - Modeling and parameter extraction technique from the ramp-voltage stressed I–V characteristics of thermally grown SiO2

AU - Slavcheva, G

PY - 1990/7

Y1 - 1990/7

UR - http://dx.doi.org/10.1016/0038-1101(90)90063-K

U2 - 10.1016/0038-1101(90)90063-K

DO - 10.1016/0038-1101(90)90063-K

M3 - Article

VL - 33

SP - 837

EP - 844

JO - Solid State Electronics

JF - Solid State Electronics

IS - 7

ER -