Modal bistability in twin-ridge injection lasers

D. Maclean; I. H. White; J. E. Carroll; C. J. Armistead; R. G. Plumb

doi:10.1007/BF02034357

Modal bistability in twin-ridge injection lasers

D. Maclean, I. H. White, J. E. Carroll, C. J. Armistead, R. G. Plumb

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Abstract

This paper reports on the first observations of a promising new form of optically triggered modal bistability in semiconductor lasers. The bistable mechanism involves a switch between the degenerate in-phase and antiphase coupled modes of an index-guided, twin-ridge laser operating at 1.3 μm wavelength. Experimental results have indicated sub-picojoule bistable switching with switching times of less than 250 ps. Possible limitations of device performance are discussed, with particular reference to asymmetry of the ridge structure.

Original language	English
Journal	Optical and Quantum Electronics
Volume	19
Issue number	1 Supplement
DOIs	https://doi.org/10.1007/BF02034357
Publication status	Published - 1 Jul 1987

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1007/BF02034357

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title = "Modal bistability in twin-ridge injection lasers",

abstract = "This paper reports on the first observations of a promising new form of optically triggered modal bistability in semiconductor lasers. The bistable mechanism involves a switch between the degenerate in-phase and antiphase coupled modes of an index-guided, twin-ridge laser operating at 1.3 μm wavelength. Experimental results have indicated sub-picojoule bistable switching with switching times of less than 250 ps. Possible limitations of device performance are discussed, with particular reference to asymmetry of the ridge structure.",

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AU - White, I. H.

AU - Carroll, J. E.

AU - Armistead, C. J.

AU - Plumb, R. G.

PY - 1987/7/1

Y1 - 1987/7/1

N2 - This paper reports on the first observations of a promising new form of optically triggered modal bistability in semiconductor lasers. The bistable mechanism involves a switch between the degenerate in-phase and antiphase coupled modes of an index-guided, twin-ridge laser operating at 1.3 μm wavelength. Experimental results have indicated sub-picojoule bistable switching with switching times of less than 250 ps. Possible limitations of device performance are discussed, with particular reference to asymmetry of the ridge structure.

AB - This paper reports on the first observations of a promising new form of optically triggered modal bistability in semiconductor lasers. The bistable mechanism involves a switch between the degenerate in-phase and antiphase coupled modes of an index-guided, twin-ridge laser operating at 1.3 μm wavelength. Experimental results have indicated sub-picojoule bistable switching with switching times of less than 250 ps. Possible limitations of device performance are discussed, with particular reference to asymmetry of the ridge structure.

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JO - Optical and Quantum Electronics

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IS - 1 Supplement

ER -

Modal bistability in twin-ridge injection lasers

Abstract

ASJC Scopus subject areas

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