MOCVD of antimony oxides for gas sensor applications

P W Haycock, G A Horley, K C Molloy, C P Myers, S A Rushworth, L M Smith

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from ((BUO)-B-n)(3)Sb in the temperature range 500 - 550 degreesC without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600 degreesC using (EtO)(3)Sb as the precursor; this latter process is enhanced by the addition of O-2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.
Original languageEnglish
Pages (from-to)1045-1050
Number of pages6
JournalJournal De Physique Iv
Volume11
Issue numberPR3
Publication statusPublished - 2001

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