Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from ((BUO)-B-n)(3)Sb in the temperature range 500 - 550 degreesC without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600 degreesC using (EtO)(3)Sb as the precursor; this latter process is enhanced by the addition of O-2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.
|Number of pages||6|
|Journal||Journal De Physique Iv|
|Publication status||Published - 2001|