MOCVD of antimony oxides for gas sensor applications

P W Haycock; G A Horley; K C Molloy; C P Myers; S A Rushworth; L M Smith

MOCVD of antimony oxides for gas sensor applications

P W Haycock, G A Horley, K C Molloy, C P Myers, S A Rushworth, L M Smith

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

7 Citations (SciVal)

Abstract

Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from ((BUO)-B-n)(3)Sb in the temperature range 500 - 550 degreesC without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600 degreesC using (EtO)(3)Sb as the precursor; this latter process is enhanced by the addition of O-2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.

Original language	English
Pages (from-to)	1045-1050
Number of pages	6
Journal	Journal De Physique Iv
Volume	11
Issue number	PR3
Publication status	Published - 2001

Bibliographical note

ID number: ISI:000171140300132

Cite this

@article{d0c96336867b44288b649d824e8f6f33,

title = "MOCVD of antimony oxides for gas sensor applications",

abstract = "Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from ((BUO)-B-n)(3)Sb in the temperature range 500 - 550 degreesC without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600 degreesC using (EtO)(3)Sb as the precursor; this latter process is enhanced by the addition of O-2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.",

author = "Haycock, {P W} and Horley, {G A} and Molloy, {K C} and Myers, {C P} and Rushworth, {S A} and Smith, {L M}",

note = "ID number: ISI:000171140300132",

year = "2001",

language = "English",

volume = "11",

pages = "1045--1050",

journal = "Journal De Physique Iv",

issn = "1155-4339",

publisher = "EDP Sciences",

number = "PR3",

}

TY - JOUR

T1 - MOCVD of antimony oxides for gas sensor applications

AU - Haycock, P W

AU - Horley, G A

AU - Molloy, K C

AU - Myers, C P

AU - Rushworth, S A

AU - Smith, L M

N1 - ID number: ISI:000171140300132

PY - 2001

Y1 - 2001

N2 - Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from ((BUO)-B-n)(3)Sb in the temperature range 500 - 550 degreesC without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600 degreesC using (EtO)(3)Sb as the precursor; this latter process is enhanced by the addition of O-2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.

AB - Thin films of Sb2O3 (senarmonite) have been grown by MOCVD from ((BUO)-B-n)(3)Sb in the temperature range 500 - 550 degreesC without addition of a separate oxygen source. In addition, films of Sb6O13 have been deposited at 600 degreesC using (EtO)(3)Sb as the precursor; this latter process is enhanced by the addition of O-2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.

M3 - Article

SN - 1155-4339

VL - 11

SP - 1045

EP - 1050

JO - Journal De Physique Iv

JF - Journal De Physique Iv

IS - PR3

ER -

MOCVD of antimony oxides for gas sensor applications

Abstract

Bibliographical note

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