Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.
|Number of pages||4|
|Journal||Physica E: Low-dimensional Systems and Nanostructures|
|Publication status||Published - 2004|
Shields, P. A., Li, L. J., & Nicholas, R. J. (2004). Mid-infrared luminescence from coupled quantum dots and wells. Physica E: Low-dimensional Systems and Nanostructures, 21(2-4), 341-344. https://doi.org/10.1016/j.physe.2003.11.042