TY - JOUR
T1 - Mid-infrared luminescence from coupled quantum dots and wells
AU - Shields, P.A.
AU - Li, L.J.
AU - Nicholas, R.J.
PY - 2004
Y1 - 2004
N2 - Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.
AB - Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.
UR - http://dx.doi.org/10.1016/j.physe.2003.11.042
U2 - 10.1016/j.physe.2003.11.042
DO - 10.1016/j.physe.2003.11.042
M3 - Article
VL - 21
SP - 341
EP - 344
JO - Physica E: Low-dimensional Systems and Nanostructures
JF - Physica E: Low-dimensional Systems and Nanostructures
IS - 2-4
ER -