Mid-infrared electroluminescence from coupled quantum dots and wells

P.A. Shields, C.W. Bumby, L.J. Li, R.J. Nicholas

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The room temperature electroluminescence (EL) between 1.7-2.6 μ from coupled quantum dots and quantum wells in the InAs/InSb/GaSb materials system was investigated. The samples which were investigated consisted of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix. It was found that the thickness of the GaSb space layer lowers the energy from that of a quantum well alone. The results reveal the occurrence of a sharp transition after a single monolayer coverage of GaSb either due to structural changes in the quantum dots or from the shrinkage of the quantum well.
Original languageEnglish
Pages (from-to)2725-2730
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
Publication statusPublished - 2004

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