Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor I electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microwave response for low-doped silicon. The results define the range of rate constants that should be experimentally accessible using microwave reflectivity methods. The time and frequency responses of light-induced microwave reflectivity changes are considered, and it is shown that they can be used to derive values of electron transfer and recombination rate constants.
Cass, M. J., Duffy, N. W., Peter, L. M., Pennock, S. R., Ushiroda, S., & Walker, A. B. (2003). Microwave reflectance studies of photoelectrochemical kinetics at semiconductor electrodes. 1. Steady-state, transient, and periodic responses. Journal of Physical Chemistry B, 107(24), 5857-5863. https://doi.org/10.1021/jp030088d