Microwave reflectance studies of photoelectrochemical kinetics at semiconductor electrodes. 1. Steady-state, transient, and periodic responses

Michael J. Cass, Noel W. Duffy, Laurence M. Peter, Stephen R. Pennock, Shin Ushiroda, Alison B. Walker

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor I electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microwave response for low-doped silicon. The results define the range of rate constants that should be experimentally accessible using microwave reflectivity methods. The time and frequency responses of light-induced microwave reflectivity changes are considered, and it is shown that they can be used to derive values of electron transfer and recombination rate constants.
Original languageEnglish
Pages (from-to)5857-5863
Number of pages7
JournalJournal of Physical Chemistry B
Volume107
Issue number24
DOIs
Publication statusPublished - 24 May 2003

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