Microwave reflectance studies of photoelectrochemical kinetics at semiconductor electrodes. 1. Steady-state, transient, and periodic responses

Michael J. Cass, Noel W. Duffy, Laurence M. Peter, Stephen R. Pennock, Shin Ushiroda, Alison B. Walker

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Abstract

Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor I electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microwave response for low-doped silicon. The results define the range of rate constants that should be experimentally accessible using microwave reflectivity methods. The time and frequency responses of light-induced microwave reflectivity changes are considered, and it is shown that they can be used to derive values of electron transfer and recombination rate constants.
LanguageEnglish
Pages5857-5863
Number of pages7
JournalJournal of Physical Chemistry B
Volume107
Issue number24
DOIs
StatusPublished - 24 May 2003

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Microwaves
Semiconductor materials
Electrodes
Kinetics
Rate constants
Electrons
Frequency response
Electrolytes
Silicon
Electric potential

Cite this

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title = "Microwave reflectance studies of photoelectrochemical kinetics at semiconductor electrodes. 1. Steady-state, transient, and periodic responses",
abstract = "Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor I electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microwave response for low-doped silicon. The results define the range of rate constants that should be experimentally accessible using microwave reflectivity methods. The time and frequency responses of light-induced microwave reflectivity changes are considered, and it is shown that they can be used to derive values of electron transfer and recombination rate constants.",
author = "Cass, {Michael J.} and Duffy, {Noel W.} and Peter, {Laurence M.} and Pennock, {Stephen R.} and Shin Ushiroda and Walker, {Alison B.}",
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T1 - Microwave reflectance studies of photoelectrochemical kinetics at semiconductor electrodes. 1. Steady-state, transient, and periodic responses

AU - Cass,Michael J.

AU - Duffy,Noel W.

AU - Peter,Laurence M.

AU - Pennock,Stephen R.

AU - Ushiroda,Shin

AU - Walker,Alison B.

N1 - ID number: ISI:000183592000028

PY - 2003/5/24

Y1 - 2003/5/24

N2 - Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor I electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microwave response for low-doped silicon. The results define the range of rate constants that should be experimentally accessible using microwave reflectivity methods. The time and frequency responses of light-induced microwave reflectivity changes are considered, and it is shown that they can be used to derive values of electron transfer and recombination rate constants.

AB - Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor I electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microwave response for low-doped silicon. The results define the range of rate constants that should be experimentally accessible using microwave reflectivity methods. The time and frequency responses of light-induced microwave reflectivity changes are considered, and it is shown that they can be used to derive values of electron transfer and recombination rate constants.

UR - http://dx.doi.org/10.1021/jp030088d

U2 - 10.1021/jp030088d

DO - 10.1021/jp030088d

M3 - Article

VL - 107

SP - 5857

EP - 5863

JO - Journal of Physical Chemistry B

T2 - Journal of Physical Chemistry B

JF - Journal of Physical Chemistry B

SN - 1520-6106

IS - 24

ER -