Abstract
We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.
| Original language | English |
|---|---|
| Pages (from-to) | 3386-3388 |
| Number of pages | 3 |
| Journal | Chemical Communications |
| Volume | 47 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2011 |
Keywords
- crystals
- zinc-oxide
- hydrogen
- thin-films
- semiconductors
- n-type
- defects