Microscopic origins of electron and hole stability in ZnO

C R A Catlow; A A Sokol; Aron Walsh

doi:10.1039/c1cc10314h

Microscopic origins of electron and hole stability in ZnO

C R A Catlow, A A Sokol, Aron Walsh

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

54 Citations (SciVal)

Abstract

We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.

Original language	English
Pages (from-to)	3386-3388
Number of pages	3
Journal	Chemical Communications
Volume	47
Issue number	12
DOIs	https://doi.org/10.1039/c1cc10314h
Publication status	Published - 2011

Keywords

crystals
zinc-oxide
hydrogen
thin-films
semiconductors
n-type
defects

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title = "Microscopic origins of electron and hole stability in ZnO",

abstract = "We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.",

keywords = "crystals, zinc-oxide, hydrogen, thin-films, semiconductors, n-type, defects",

author = "Catlow, {C R A} and Sokol, {A A} and Aron Walsh",

year = "2011",

doi = "10.1039/c1cc10314h",

language = "English",

volume = "47",

pages = "3386--3388",

journal = "Chemical Communications",

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publisher = "Royal Society of Chemistry",

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T1 - Microscopic origins of electron and hole stability in ZnO

AU - Catlow, C R A

AU - Sokol, A A

AU - Walsh, Aron

PY - 2011

Y1 - 2011

N2 - We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.

AB - We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.

KW - crystals

KW - zinc-oxide

KW - hydrogen

KW - thin-films

KW - semiconductors

KW - n-type

KW - defects

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UR - http://dx.doi.org/10.1039/c1cc10314h

U2 - 10.1039/c1cc10314h

DO - 10.1039/c1cc10314h

M3 - Article

SN - 1359-7345

VL - 47

SP - 3386

EP - 3388

JO - Chemical Communications

JF - Chemical Communications

IS - 12

ER -

Microscopic origins of electron and hole stability in ZnO

Abstract

Keywords

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