Microscopic origins of electron and hole stability in ZnO

C R A Catlow, A A Sokol, Aron Walsh

Research output: Contribution to journalArticlepeer-review

52 Citations (SciVal)


We present a fundamental method to assess the doping limits of hetero-polar materials; applied to the case of ZnO, we show clearly that electrons are stable and holes are unstable under the limits of thermodynamic control.
Original languageEnglish
Pages (from-to)3386-3388
Number of pages3
JournalChemical Communications
Issue number12
Publication statusPublished - 2011


  • crystals
  • zinc-oxide
  • hydrogen
  • thin-films
  • semiconductors
  • n-type
  • defects


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