Metallic behaviour in SOI quantum wells with strong intervalley scattering

V T Renard, I Duchemin, Yoshitaka Niida, Akira Fujiwara, Yoshiro Hirayama, Kei Takashina

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Abstract

The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals for valleytronics devices. In silicon MOSFETs, the interest has a longer history since the valley degree of freedom had been identified as a key parameter in the observation of the controversial “metallic behaviour” in two dimensions. However, while it has been recently demonstrated that lifting valley degeneracy can destroy the metallic behaviour, little is known about the role of intervalley scattering. Here, we show that the metallic behaviour can be observed in the presence of strong intervalley scattering in silicon on insulator (SOI) quantum wells. Analysis of the conductivity in terms of quantum corrections reveals that interactions are much stronger in SOI than in conventional MOSFETs, leading to the metallic behaviour despite the strong intervalley scattering.
Original languageEnglish
Article number2011
JournalScientific Reports
Volume3
DOIs
Publication statusPublished - 18 Jun 2013

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insulators
quantum wells
valleys
silicon
scattering
field effect transistors
degrees of freedom
proposals
histories
conductivity
electrons
interactions

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Metallic behaviour in SOI quantum wells with strong intervalley scattering. / Renard, V T; Duchemin, I; Niida, Yoshitaka; Fujiwara, Akira; Hirayama, Yoshiro; Takashina, Kei.

In: Scientific Reports, Vol. 3, 2011, 18.06.2013.

Research output: Contribution to journalArticle

Renard, V T ; Duchemin, I ; Niida, Yoshitaka ; Fujiwara, Akira ; Hirayama, Yoshiro ; Takashina, Kei. / Metallic behaviour in SOI quantum wells with strong intervalley scattering. In: Scientific Reports. 2013 ; Vol. 3.
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