Abstract
The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e2/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
Original language | English |
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Pages (from-to) | 2364-2367 |
Journal | Physical Review Letters |
Volume | 85 |
Issue number | 11 |
DOIs | |
Publication status | Published - 11 Sept 2000 |