Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

L. J. Sargent, M. Kuball, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. R T Tan, S. Y. Wang

Research output: Contribution to journalConference articlepeer-review

Abstract

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

Original languageEnglish
Pages (from-to)119-120
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
Publication statusPublished - 1 Dec 1998
EventProceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn
Duration: 4 Oct 19988 Oct 1998

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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