Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

L. J. Sargent; M. Kuball; J. M. Rorison; R. V. Penty; I. H. White; P. J. Heard; M. R T Tan; S. Y. Wang

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

L. J. Sargent, M. Kuball, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. R T Tan, S. Y. Wang

University of Bristol

Research output: Contribution to journal › Conference article › peer-review

Abstract

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

Original language	English
Pages (from-to)	119-120
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
Publication status	Published - 1 Dec 1998
Event	Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC - Nara, Jpn Duration: 4 Oct 1998 → 8 Oct 1998

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

@article{cb29dd733a3146b59b83bbe128ff12a3,

title = "Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching",

abstract = "Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.",

author = "Sargent, {L. J.} and M. Kuball and Rorison, {J. M.} and Penty, {R. V.} and White, {I. H.} and Heard, {P. J.} and Tan, {M. R T} and Wang, {S. Y.}",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "119--120",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "IEEE",

note = "Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC ; Conference date: 04-10-1998 Through 08-10-1998",

}

TY - JOUR

T1 - Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

AU - Sargent, L. J.

AU - Kuball, M.

AU - Rorison, J. M.

AU - Penty, R. V.

AU - White, I. H.

AU - Heard, P. J.

AU - Tan, M. R T

AU - Wang, S. Y.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

AB - Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

UR - http://www.scopus.com/inward/record.url?scp=0032308366&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032308366

SN - 0899-9406

SP - 119

EP - 120

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - Proceedings of the 1998 16th IEEE International Semiconductor Laser Conference, ISLC

Y2 - 4 October 1998 through 8 October 1998

ER -

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

Abstract

ASJC Scopus subject areas

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