Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices

C. L. Tseng; M.  J. Youh; G. P. Moore; M. A. Hopkins; R. Stevens; W. N. Wang

doi:10.1063/1.1619558

Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices

C. L. Tseng, M. J. Youh, G. P. Moore, M. A. Hopkins, R. Stevens, W. N. Wang

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (SciVal)

Abstract

The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness and morphology. A change in film thickness, induced by thermal annealing, results in a more transparent contact material. In addition a ZnO film was used as an antireflection layer on top of a Ni/Au contact. The Ni/Au/ZnO film was found to have an increased light transmission of 15% compared with an annealed Ni/Au contact. The maximum optical transmission measured through the Ni/Au/ZnO contact was 90%.

Original language	English
Pages (from-to)	3677-3679
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	18
DOIs	https://doi.org/10.1063/1.1619558
Publication status	Published - 2003

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ID number: ISI:000186256300011

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title = "Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices",

abstract = "The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness and morphology. A change in film thickness, induced by thermal annealing, results in a more transparent contact material. In addition a ZnO film was used as an antireflection layer on top of a Ni/Au contact. The Ni/Au/ZnO film was found to have an increased light transmission of 15% compared with an annealed Ni/Au contact. The maximum optical transmission measured through the Ni/Au/ZnO contact was 90%. ",

author = "Tseng, {C. L.} and Youh, {M. J.} and Moore, {G. P.} and Hopkins, {M. A.} and R. Stevens and Wang, {W. N.}",

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T1 - Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices

AU - Tseng, C. L.

AU - Youh, M. J.

AU - Moore, G. P.

AU - Hopkins, M. A.

AU - Stevens, R.

AU - Wang, W. N.

N1 - ID number: ISI:000186256300011

PY - 2003

Y1 - 2003

N2 - The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness and morphology. A change in film thickness, induced by thermal annealing, results in a more transparent contact material. In addition a ZnO film was used as an antireflection layer on top of a Ni/Au contact. The Ni/Au/ZnO film was found to have an increased light transmission of 15% compared with an annealed Ni/Au contact. The maximum optical transmission measured through the Ni/Au/ZnO contact was 90%.

AB - The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness and morphology. A change in film thickness, induced by thermal annealing, results in a more transparent contact material. In addition a ZnO film was used as an antireflection layer on top of a Ni/Au contact. The Ni/Au/ZnO film was found to have an increased light transmission of 15% compared with an annealed Ni/Au contact. The maximum optical transmission measured through the Ni/Au/ZnO contact was 90%.

UR - http://dx.doi.org/10.1063/1.1619558

U2 - 10.1063/1.1619558

DO - 10.1063/1.1619558

M3 - Article

SN - 0003-6951

VL - 83

SP - 3677

EP - 3679

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices

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